Mitsubishi Materials Corporation

Honda Motor Co., Ltd.

Yuki Ito

Kazunari Maki

Hiroyuki Mori

Kosei Fukuoka

Hirotaka Matsunaga

Naoto Ohkubo

Yuki Hotani

Hiroyuki Matsukawa

Osamu Yamamoto

Hiromi Inagaki

Yuji Isogai

Kazuki Saimen

Kenichiro Kawasaki

Norihisa Iida

Takumi Odaira

Motohiro Hitaka

Kunimichi Hatano

Daisuke Sakamoto

Kan Nakaune

Kenji Sato

Kaoru Omichi

Hayato Takahashi

Nobuo Suzuki

Shinichi Funaki

Shinichi Sato

Naoki Miyashima

Teruo Kobayashi

Jun Kato

Kazuhito Nakao

Hajime Abe

Atsushi Tamai

Shuichi Kitahara

Kinya Fujii

Yuusuke Wada

Takanori Kobayashi

Kaoru Ishii

This pure copper plate includes Cu having a purity of 99.96 mass % or higher, with a remainder of unavoidable impurities, wherein an amount of P is 2 mass ppm or less, and a total amount of Pb, Se, and Te is 10 mass ppm or less. The amount of S may be in a range of 2 mass ppm or more and 20 mass ppm or less.

Pure copper plate

A pure copper sheet of the present invention has a composition including 99.96 mass % or more of Cu, 0.01 mass ppm or more and 3.00 mass ppm or less of P, 3.0 mass ppm or more of a total content of Ag and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 μm or more, and, in a case where a measurement area of 1 mmor more is measured by an EBSD method at measurement intervals of 5 μm steps, a measurement point where a CI value analyzed with data analysis software OIM is 0.1 or less is excluded, and a boundary where an orientation angle between adjacent pixels is 5° or more is regarded as a crystal grain boundary, a Kernel average misorientation (KAM) value is 1.50 or less.

This pure copper material includes Cu in an amount of 99.9 mass % or more and 99.999 mass % or less, an average crystal grain size in a rolled surface is 10 μm or more, and when a measurement area of 1 mmor more is measured by an EBSD method at a measurement interval of 1 μm, measurement points at which a CI value obtained by an analysis using data analysis software OIM is 0.1 or less are excluded, and boundaries between adjacent pixels with a misorientation of 5° or more are regarded as crystal grain boundaries, an average of local orientation spread (LOS) is 2.00° or less.

Pure copper material, insulating substrate, and electronic device

This pure copper material includes Cu in an amount of 99.96 mass % or more, either one or both of one or more A-group elements selected from Ca, Ba, Sr, Zr, Hf, Y, Sc, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu, and one or more B-group elements selected from O, S, Se, and Te are included in a total amount of 10 mass ppm or more and 300 mass ppm or less, an average crystal grain size in a rolled surface is 15 μm or more, and a high-temperature Vickers hardness at 850° C. is 4.0 HV or more and 10.0 HV or less.

A pure copper sheet has a composition including 99.96 mass % or more of Cu, 9.0 mass ppm or more and less than 100.0 mass ppm of a total content of Ag, Sn, and Fe, and inevitable impurities as a balance, in which an average crystal grain size of crystal grains on a rolled surface is 10 μm or more, the pure copper sheet has crystals in which crystal planes parallel to the rolled surface are a {022} plane, a {002} plane, a {113} plane, a {111} plane, and a {133} plane, and diffraction peak intensities of the individual crystal planes that are obtained by X-ray diffraction measurement by a 2θ/θ method on the rolled surface satisfy I {022}/(I {022}+I {002}+I {113}+I {111}+I {133})≤0.15, I {002}/I {111}≥10.0, and I {002}/I {113}≥15.0.

Pure copper plate, copper/ceramic bonded body, and insulated circuit board

To improve adhesion between a plating film reducing contact electrical resistance and a copper alloy plate containing Mg. A copper alloy plate containing Mg of more than 1.2% by mass and 2% by mass or less and the balance Cu and inevitable impurities in a center portion in a plate thickness direction, in the copper alloy plate, a surface Mg concentration at a surface is 30% or less of a center Mg concentration at the center portion in the plate thickness direction, a surface layer portion having a depth from the surface to where a Mg concentration is 90% of the center Mg concentration is provided, and in the surface layer portion, the Mg concentration increases from the surface toward the center portion of the plate thickness direction with a concentration gradient of 0.2% by mass/&#x3bc;m or more and 50% by mass/&#x3bc;m or less.

Copper alloy plate, copper alloy plate with plating film, and manufacturing method thereof

A copper alloy has a composition including: 70 mass ppm or more and 400 mass ppm or less of Mg; 5 mass ppm or more and 20 mass ppm or less of Ag; less than 3.0 mass ppm of P; and a Cu balance containing inevitable impurities. In the copper alloy, the electrical conductivity is 90% IACS or more, and the average value of KAM values is 3.0 or less.

Copper alloy, copper alloy plastic-processed material, component for electronic and electric devices, terminal, bus bar, and heat-diffusing substrate

This copper alloy for electronic or electric devices contains 100 mass ppm or greater and 400 mass ppm or less of Mg, 5 mass ppm or greater and 20 mass ppm or less of Ag, and less than 5 mass ppm of P with a balance being Cu and inevitable impurities, in which when a ratio of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to all grain boundary triple junctions is defined as NFand a ratio of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary constituting the grain boundary triple junction is a random grain boundary, to all grain boundary triple junctions is defined as NF, an expression of 0.22&#x3c;(NF/(1&#x2212;NF))&#x2264;0.45 is satisfied.

Copper alloy for electronic/electrical devices, copper alloy planar bar stock for electronic/electrical devices, component for electronic/electrical devices, terminal and bus bar

A superconductivity stabilizing material used for a superconducting wire and which is formed of a copper material containing at least one of additive elements selected from Ca, Sr, Ba, and rare earth elements in a range of 3 ppm by mass or more and 100 ppm by mass or less in total, with a remainder being Cu and unavoidable impurities, in which the total concentration of the unavoidable impurities, excluding O, H, C, N, and S which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, the half-softening temperature thereof is 200&#xb0; C. or lower, the Vickers hardness thereof is 55 Hv or more, and the residual resistance ratio (RRR) thereof is 50 or more and 500 or less.

Superconductivity stabilizing material, superconducting wire and superconducting coil

This copper alloy powder having an excellent laser absorptivity includes: either one or both of B and S in an amount of 0.003 mass % to 5.0 mass %, with a remainder being Cu and inevitable impurities, wherein an average particle diameter is 20 &#x3bc;m to 80 &#x3bc;m. This copper alloy powder having an excellent laser absorptivity is preferably a powder for metal additive manufacturing.

Copper alloy powder having excellent laser absorptivity

A lithium ion battery control device includes an acquirer configured to acquire a determination index related to the degree of occlusion of a lithium ion battery in which a degree of occlusion of lithium ions occluded in graphite of a negative electrode changes in accordance with an amount of stored power, and a controller configured to perform control for causing the lithium ion battery to be charged with power or causing power of the lithium ion battery to be discharged so that the degree of occlusion is close to a degree of occlusion associated with a specific region when a region associated with the degree of occlusion is determined not to be the specific region associated with the degree of occlusion which includes LiChaving a degree of occlusion represented by a stoichiometric ratio and does not include LiChaving a degree of occlusion represented by a stoichiometric ratio.

Lithium ion battery control device, and lithium ion battery control method

This stabilizer material for superconductor includes a copper material, wherein the copper material contains one kind or two kinds or more of additive elements selected from Ca, La, and Ce for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, and the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO, LaS, LaSO, CeS, and CeSOare present in the matrix.

Stabilizer material for superconductor

This superconducting wire includes: a strand including a superconducting material; and a stabilizer material for superconductor arranged in contact with the strand, wherein the stabilizer material for superconductor includes a copper material which contains one kind or two kinds or more of additive elements selected from Ca, Sr, Ba, and rare earth elements (RE) for a total amount of 3 ppm by mass or more and 400 ppm by mass or less, with the remainder being Cu and unavoidable impurities, the total concentration of the unavoidable impurities other than O, H, C, N, and S, which are gas components, is 5 ppm by mass or more and 100 ppm by mass or less, and compounds including one kind or two kinds or more selected from CaS, CaSO, SrS, SrSO, BaS, BaSO, (RE)S, and (RE)SOare present in the matrix.

Superconducting wire and superconducting coil

The present invention is a superconducting stabilization material used for a superconducting wire, which is formed of a copper material which contains: one or more types of additive elements selected from Ca, La, and Ce in a total of 3 ppm by mass to 400 ppm by mass; and a balance being Cu and inevitable impurities and in which a total concentration of the inevitable impurities excluding O, H, C, N, and S which are gas components is 5 ppm by mass to 100 ppm by mass.

Superconducting stabilization material, superconducting wire, and superconducting coil

The present invention is a superconducting wire including: a wire formed of a superconducting material; and a superconducting stabilization material disposed in contact with the wire, in which the superconducting stabilization material is formed of a copper material which contains: one or more types of additive elements selected from Ca, Sr, Ba, and rare earth elements in a total of 3 ppm by mass to 400 ppm by mass; a balance being Cu and inevitable impurities, and in which a total concentration of the inevitable impurities excluding O, H, C, N, and S which are gas components is 5 ppm by mass to 100 ppm by mass.

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Saitama, Japan

Yuki Ito