Tokyo Electron Limited

Yuki Hosaka

Mitsunori Ohata

Yoshihiro Umezawa

Toshiki Nakajima

Mayo Uda

Naokazu Furuya

Hwajun Jung

Takashi Yamamoto

Koichi Nagakura

Kazuya Matsumoto

Takashi Kubo

Kenichi Shimono

Wan Sung Jin

Masahiro Suzuki

A plasma processing apparatus comprising a processing chamber, a dielectric, an antenna, and a first to third electromagnet groups is disclosed. In the processing chamber, a mounting table having a mounting surface is included and a plasma process is performed. A surface of the dielectric faces the mounting surface. The antenna, provided on the opposite surface of the dielectric, introduces an electric field into the processing table through the dielectric to form plasma. The first electromagnet group, provided at a position higher than the mounting surface on an outer perimeter of the processing chamber, forms a first magnetic field above the mounting surface. The second electromagnet group, provided inside the mounting table along an outer perimeter thereof, and the third electromagnet group, provided at a position corresponding to the second electromagnet group on the outer perimeter of the processing chamber, cooperate with each other to form a second magnetic field around the mounting surface.

Plasma processing apparatus

A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including an electrostatic chuck; a first ring disposed on the electrostatic chuck to surround a substrate on the electrostatic chuck and including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than that of the intermediate annular portion, a top surface of the outer annular portion being higher than that of the inner annular portion; a second ring disposed on the intermediate annular portion; and an actuator configured to vertically move the second ring to maintain a top surface of the second ring at a first height greater than a height of the top surface of the inner annular portion and less than a height of the top surface of the outer annular portion.

A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, an annular baffle plate disposed so as to surround the substrate support, the annular baffle plate having a plurality of openings, a first annular plate disposed below the annular baffle plate, a second annular plate disposed below the first annular plate, the second annular plate having an annular overlapping portion vertically overlapping with a part of the first annular plate, a pressure detector configured to detect a pressure in the plasma processing chamber, and at least one actuator configured to vertically move at least one of the first and second annular plates so as to change a distance between the first annular plate and the second annular plate based on the detected pressure.

Plasma processing apparatus and plasma processing method

A plasma processing apparatus includes a baffle structure between a mounting table and a processing chamber. The baffle structure has a first member and a second member. The first member has a first cylindrical part extending between the mounting table and the processing chamber, and a plurality of through-holes elongated in the vertical direction is formed in an array in the circumferential direction in the first cylindrical part. The second member has a second cylindrical part having an inner diameter greater than the outer diameter of the cylindrical part for the first member. The second member moves up and down in a region that includes the space between the first member and the processing chamber.

A plasma processing apparatus includes a processing container; a placement table provided in the processing container and including a placement region on which a workpiece is placed for a plasma processing; a baffle structure that defines a first space and a second space, and including a first member and at least one second member; a gas supply portion connected to the first space; a first pressure gauge connected to the first space; an exhaust apparatus connected to the second space; a second pressure gauge connected to the second space; a driving mechanism that moves the at least one second member in a vertical direction; a displacement gauge configured to measure a position or a distance of the second member; and a controller that controls the driving mechanism. The controller controls the driving mechanism such that a pressure of the first space becomes a predetermined pressure designated by a recipe.

The mechanism includes a pipe and a valve provided in the pipe. The pipe is configured to connect a gas source and a semiconductor manufacturing apparatus. The valve is configured to control a flow rate of the gas. The valve includes a housing and a columnar shaft. The housing includes an inlet and an outlet. A gas flows from the gas source into the internal space through the inlet. A gas flows from the internal space to the semiconductor manufacturing apparatus through the outlet. A gap is provided between an outer peripheral surface of the shaft and an inner wall surface of the housing. The shaft is accommodated in the internal space of the housing and is rotatable. A through hole which penetrates the shaft is formed on the outer peripheral surface of the shaft. Both ends of the through hole correspond to the inlet and the outlet.

Gas supply mechanism and semiconductor manufacturing system

A plasma processing apparatus includes a support structure configured to support a workpiece and a first drive device configured to rotate the support structure about a first axis extending in a direction orthogonal to a vertical direction. The support structure includes a holding unit including an electrostatic chuck and a container provided under the holding unit. The container includes a tubular container body, and a bottom cover configured to close a bottom side opening of the container body and to be detachable from the container body. A maintenance method includes: rotating a support structure about a first axis such that the bottom cover is positioned above an electrostatic chuck, removing the bottom cover from the container body, and maintaining a component provided in the container body.

Maintenance method of plasma processing apparatus

According to an aspect, a gas supply mechanism for supplying a gas to a semiconductor manufacturing apparatus is provided. The gas supply mechanism includes a pipe connecting a gas source and the semiconductor manufacturing apparatus to each other, and a valve which is provided on the pipe. The valve includes a plate rotatable about an axis, the axis extending in a plate thickness direction, and a housing provided along the plate without contacting the plate to accommodate the plate, the housing providing a gas supply path along with the pipe. A through hole is formed in the plate, the through hole penetrating the plate at a position on a circle which extends around the axis and intersects the gas supply path.

Gas supply mechanism and semiconductor manufacturing apparatus

A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.

Temperature control device for processing target object and method of selectively etching nitride film from multilayer film

Disclosed is a plasma processing apparatus capable of more accurately controlling plasma. The plasma processing apparatus includes a shower head provided within a processing chamber, in which a substrate accommodated therein is processed, to be faced to a mounting table for mounting the substrate and supply gas from a plurality of gas discharging holes provided on a facing surface that faces the mounting table toward a substrate in a shower pattern; a plurality of exhaust holes that passes through a surface located at an opposite side to the facing surface of the shower head; a circular plate-like body that is disposed parallel to the opposite surface in a exhaust space that communicates with the exhaust holes distributed at the opposite surface and made of a conductive material; and a moving unit configured to move the plate-like body to change a distance between the exhaust holes and the plate-like body.

A plasma processing apparatus includes: a first ground member provided in processing chamber in such a way that at least a portion of the first ground member is exposed to a processing space, wherein the first ground member forms a ground potential; a second ground member provided in an exhaust space of the processing chamber to face the first ground member in such a way that at least a portion of the second ground member is exposed to the exhaust space, wherein the second ground member forms a ground potential; and a ground rod that moves up and down between the first and second ground members and contacts any one of the first or second ground member to adjust a ground state of the first or second ground member.

Growing community of inventors

Miyagi, Japan

Yuki Hosaka