Semiconductor Energy Laboratory Co., Ltd.

Yuki Hata

Shunpei Yamazaki

Atsuo Isobe

Kiyoshi Kato

Shuhei Nagatsuka

Yoshinori Ieda

Shinya Sasagawa

Motomu Kurata

Katsuaki Tochibayashi

Tomoyuki Iwabuchi

Ryota Hodo

Yuto Yakubo

Shinpei Matsuda

Akihiro Kimura

Junpei Sugao

Suguru Hondo

Masayuki Sakakura

Yuta Endo

Toshihiko Saito

Koichiro Kamata

Keitaro Imai

Yoshinori Ando

Yasutaka Suzuki

A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

Semiconductor device and manufacturing method thereof

A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.

Transistor with receded conductor, semiconductor device, and electronic device

To provide a semiconductor device which occupies a small area and is highly integrated. The semiconductor device includes an oxide semiconductor layer, an electrode layer, and a contact plug. The electrode layer includes one end portion in contact with the oxide semiconductor layer and the other end portion facing the one end portion. The other end portion includes a semicircle notch portion when seen from the above. The contact plug is in contact with the semicircle notch portion.

Semiconductor device

A semiconductor device with high design flexibility is provided. A first transistor and a second transistor having electrical characteristics different from those of the first transistor are provided over the same layer without significantly increasing the number of manufacturing steps. For example, semiconductor materials with different electron affinities are used for a semiconductor layer in which a channel of the first transistor is formed and a semiconductor layer in which a channel of the second transistor is formed. This allows the threshold voltages of the first transistor and the second transistor to differ from each other. Forming a gate electrode using a damascene process enables miniaturization and high density of the transistors. Furthermore, a highly-integrated semiconductor device is provided.

Semiconductor device and electronic device

A transistor including an oxide semiconductor and having favorable operation characteristics is provided. Further, by using the transistor, a semiconductor having improved operation characteristics can be provided. In planar view, one of a source electrode and a drain electrode of the transistor is surrounded by a ring-shaped gate electrode. Further, in planar view, one of the source electrode and the drain electrode of the transistor is surrounded by a channel formation region. Accordingly, the source electrode is not electrically connected to the drain electrode through a parasitic channel generated in an end portion of an island-shaped oxide semiconductor layer.

An object is to miniaturize a semiconductor device. Another object is to reduce the area of a driver circuit of a semiconductor device including a memory cell. The semiconductor device includes an element formation layer provided with at least a first semiconductor element, a first wiring provided over the element formation layer, an interlayer film provided over the first wiring, and a second wiring overlapping with the first wiring with the interlayer film provided therebetween. The first wiring, the interlayer film, and the second wiring are included in a second semiconductor element. The first wiring and the second wiring are wirings to which the same potentials are supplied.

A semiconductor device including an oxide semiconductor that is miniaturized and has favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor film and a blocking film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate insulating film in contact with the oxide semiconductor film, the source electrode, and the drain electrode; and a gate electrode in contact with the gate insulating film. The blocking film contains the same material as the oxide semiconductor film, is on the same surface as the oxide semiconductor film, and has a higher conductivity than the oxide semiconductor film.

Semiconductor transistor device

It is an object to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of writings. A semiconductor device includes a second transistor and a capacitor provided over a first transistor. A source electrode of the second transistor which is in contact with a gate electrode of the first transistor is formed using a material having etching selectivity with respect to the gate electrode. By forming the source electrode of the second transistor using a material having etching selectivity with respect to the gate electrode of the first transistor, a margin in layout can be reduced, so that the degree of integration of the semiconductor device can be increased.

The semiconductor device is provided in which a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is arranged in matrix and a wiring (also referred to as a bit line) for connecting one of the memory cells and another one of the memory cells and a source or drain region in the first transistor are electrically connected through a conductive layer and a source or drain electrode in the second transistor provided therebetween. With this structure, the number of wirings can be reduced in comparison with a structure in which the source or drain electrode in the first transistor and the source or drain electrode in the second transistor are connected to different wirings. Thus, the integration degree of a semiconductor device can be increased.

Storage device comprising semiconductor elements

To provide a display device having a test circuit with high accuracy for testing in the step after a counter substrate is attached and before shipping, and to provide a display device having a correction circuit inside the display device, for the case where a defect occurs. A pixel circuit operated by a gate line and a source line, a first wiring formed at the same time as the gate line, a second wiring formed at the same time as the source line, and a test circuit of detecting a defect of the pixel circuit by using potentials of the first wiring and the second wiring are provided over a substrate.

Display device including test circuit, and electronic apparatus having the display device

The semiconductor device includes an antenna, a rectifier circuit, a first protection circuit, and a second protection circuit. The antennagenerates AC voltage. The rectifier circuitrectifies the AC voltage and generates internal voltage Vin. The first protection circuitincludes a first diodeand a second diode. The second protection circuitincludes a capacitorand a transistor. In the case where the absolute value of the AC voltage generated in the antennais larger than a certain value, the first protection circuitcuts the surplus. The second protection circuitfunctions in the case where the level of the internal voltage Vin generated in the rectifier circuitis high. By changing resonant frequency, the second protection circuitcan decrease the number of signals input to the semiconductor device.

Growing community of inventors

Kanagawa, Japan

Yuki Hata