Mitsubishi Chemical Corporation

Yuki Haruta

Kenji Shimoyama

Shoya Yoda

Hayato Ogasawara

Takumi Watanabe

Tadahiro Katsumoto

Noriaki Terada

Shohei Hirase

A nitride LED having improved light extraction efficiency and/or axial luminous intensity is provided. The nitride LED contains a nitride semiconductor substrate having, on a front face thereof, a light-emitting structure made of a nitride semiconductor, wherein a roughened region is provided on a back face of the substrate, the roughened region has a plurality of protrusions, each of the plurality of protrusions has a top point or top plane and has a horizontal cross-section which is circular, except in areas where the protrusion is tangent to other neighboring protrusions, and which has a surface area that decreases on approaching the top point or top plane, the plurality of protrusions are arranged such that any one protrusion is in contact with six other protrusions, and light generated in the light-emitting structure is output to the exterior through the roughened region.

Nitride light-emitting diode element and method of manufacturing same

An object of the present invention is to provide a GaN-based light emitting diode element having a great emission efficiency and suitable for an excitation light source for a white LED. The GaN-based light emitting diode element includes an n-type conductive m-plane GaN substrate, a light emitting diode structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate, and an n-side ohmic electrode formed on a rear face of the m-plane GaN substrate, wherein a forward voltage is 4.0 V or less when a forward current applied to the light emitting diode element is 20 mA.

Light emitting diode element

Growing community of inventors

Yokkaichi, Japan

Yuki Haruta