Ngk Insulators, Inc.

Yuki Bessho

Yukimasa Mori

Nobuo Takahashi

Hiromichi Kobayashi

Yukihisa Takeuchi

Naohito Yamada

Hiroyuki Shindo

Masahiro Murasato

Tsutomu Nanataki

Yuji Katsuda

Takao Ohnishi

Iwao Ohwada

Nobuyuki Kobayashi

Yosuke Sato

Takayoshi Akao

Hiroki Fujita

Michio Takahashi

A method of manufacturing a sintered body is provided. A molding powder, a gel-forming material powder and a solvent are mixed at a temperature not higher than a dissolving point of the gel-forming material. A treatment of pulverizing agglomerates containing the molding powder, gel-forming material powder and solvent absorbed in the gel-forming material powder is carried out. The mixture is then heated to a temperature not lower than the dissolving point thereby forming a sol. The sol is then cooled to a temperature not higher than the gel point, thereby forming a molding material. The molding material is used for producing a sintering body.

Method of making a molded body using a chopper blade and a planetary blade

A metal phosphate composite having a composition represented by the formula M1M2(HPO) (wherein M1 represents at least one element selected from the group consisting of tin, titanium, zirconium, silicon, and germanium, M2 represents an element having a valence of 3, and x, w, y, and z satisfy the following relationship, 0.5&#x2266;x&#x3c;1, 0&#x2266;w, 2&#x3c;y&#x3c;10, and 0&#x3c;z&#x3c;35).

Metal phosphate composite and dense material comprised of the same

An electron beam irradiating apparatus includes a chamber being kept under vacuum, and housing a planar electron emitting element and a positioning unit and an object to be irradiated is directly irradiated with an electron beam emitted from the element. The planar electron emitting element includes: an emitter portion composed of a dielectric material; and a first electrode and a second electrode applied with a driving voltage for emitting electrons, and the first electrode is formed on a first surface of the emitter portion and has a plurality of through-holes where the emitter portion is exposed, a surface of the first electrode facing to the emitter portion around the through-holes is separated from the emitter portion, and the electron beam is emitted from the first surface of the emitter portion through the through-holes.

Electron beam irradiating apparatus

A micro reactor comprising: a first substrate comprising a predetermined number each of micro channels, reactors connected to micro channels at respective connection points, injection ports for feeding/receiving a sample solution, and discharge ports for recovering a sample solution after reaction from respective reactors; and a second substrate in which at least one micro pump is disposed so as to be faced to the injection ports and the discharge ports, the at least one micro pump being provided with a substrate including a cavity made of a ceramic in the inner surface thereof; a piezoelectric/electrostrictive operation section formed on the outer surface of the substrate, and at least two connection ports for feeding/receiving a sample solution in the cavity; and the micro reactor being formed integrally by laminating the first substrate and the second substrate.

Micro reactor

Methods for making molding material, molded body, and sintered body

A method is provided for manufacturing a piezoelectric/electrostrictive film device including a ceramic substrate and a piezoelectric/electrostrictive operation portion including a lower electrode, a piezoelectric/electrostrictive layer, and upper electrode stacked on the substrate. The piezoelectric/electrostrictive layer is formed to extend beyond at least one of electrodes to form projected portions at its ends. The method includes the steps of forming the piezoelectric/electrostrictive layer so that ends of the piezoelectric/electrostrictive layer are projected to extend beyond ends of at least one electrode, applying a coating liquid in a sufficient amount so that the coating liquid permeates through a gap between at least the projected end portion of the piezoelectric/electrostrictive layer and the substrate, and so as to coat a predetermined portion of the at least one electrode, and drying the applied coating liquid to form a coupling member to couple the projected end portions of the piezoelectric/electrostrictive layer to the substrate.

Manufacturing method of piezoelectric/electrostrictive film type device

There is disclosed a piezoelectric/electrostrictive film device which has a flexural displacement and durability equal to or more than those of a related-art piezoelectric/electrostrictive film device and which has a remarkably high resonance frequency and which is superior in high-speed response. The piezoelectric/electrostrictive film device comprises: a substrate formed of ceramic; and a piezoelectric/electrostrictive operation portion including a lower electrode, piezoelectric/electrostrictive layer, and upper electrode which are successively stacked on the substrate and including a projecting end of the piezoelectric/electrostrictive layer with which an upper surface of the lower electrode and a lower surface of the upper electrode are coated, and a projecting portion of the piezoelectric/electrostrictive layer is a coupling member constituted of a hybrid material in which inorganic particles are scattered in a matrix of a polymer compound, and is coupled to the substrate.

Piezoelectric/electrostrictive film device, and manufacturing method of the device

A piezoelectric/electrostrictive film device is provided, including a ceramic substrate, and a piezoelectric/electrostrictive actuator including a lower electrode, a piezoelectric/electrostrictive layer and an upper electrode that are sequentially layered on the substrate. The piezoelectric/electrostrictive layer covers an upper surface of the lower electrode and a lower surface of the upper electrode and protrudes over edges thereof. The protruded portions of the piezoelectric/electrostrictive layer are coupled to the substrate via a coupling member.

Piezoelectric/electrostrictive film device

A drive device includes ceramic pumps which alternately pressurize and depressurize fluid within a fluid chamber on opposite sides of a movable body, to thereby move the movable body within the flow chamber. The flow chamber is connected via micro flow passages to an internal-pressure buffering chamber, which accommodates a compressible gas. When the pressure of the fluid is increased and decreased at high speed by the ceramic pumps, the micro flow passages exhibit a high passage resistance, so that the pressure within the channel does not escape to the internal-pressure buffering chamber, and the movable body moves freely. When the pressure of the fluid increases slowly due to the expansion of the fluid, the micro flow passages exhibit a low passage resistance, so that the fluid is led to the internal-pressure buffering chamber, and the pressure increase of the fluid is suppressed.

Drive device

An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0&times;10,&OHgr;&middot;cm and is smaller than 1.0&times;10,&OHgr;&middot;cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Aluminum nitride sintered body, metal including member, electrostatic chuck, method of producing aluminum nitride sintered body, and method of producing metal including member

In AlN crystal grains constituting a sintered body, is contained: 150 ppm-0.5 wt. %, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt. % of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 .mu.m and show a main peak in the wavelength range of 350-370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0.times.10.sup.12 .OMEGA..multidot.cm.

Aluminum nitride sintered body, metal embedded article, electronic

An aluminum nitride sintered body has characteristics such that an amount of total metal elements other than aluminum is smaller than 100 ppm, and a volume resistivity at room temperature is greater than 1.0.times.10.sup.9 .OMEGA..multidot.cm and is smaller than 1.0.times.10.sup.13 .OMEGA..multidot.cm. A metal including member has such a construction that a metal member is embedded in the aluminum nitride sintered body mentioned above. An electrostatic chuck is made by the metal including member mentioned above. In the metal including member mentioned above in which the metal member is embedded in the aluminum nitride sintered body mentioned above, a volume resistivity thereof can be controlled without adding a low resistance material in aluminum nitride.

Aluminum nitride sintered body, metal including member, electrostatic

An aluminum nitride sintered body is characterized by having a g-value of an unpaired electron in a spectrum of an electron spin resonance being not less than 2.0010. The aluminum nitride sintered body is produced by sintering a raw material composed of powdery aluminum nitride at a temperature of not less than 1730.degree. C. to not more than 1920.degree. under a pressure of not less than 80 kg/cm.sup.2.

Growing community of inventors

Nishikasugai-gun, Japan

Yuki Bessho