Sandisk Technologies Inc.

Sk Hynix Memory Solutions Inc.

Yukeun Sim

Yingchang Chen

Anurag Nigam

Jenn-Gang Chern

Jingwen Ouyang

A system may include a controller, a data receiving circuit, and a plurality of banks. The banks may send data to the data receiving circuit via a common data bus. The controller may control the communication of the data to the receiving circuit by sending control signals and clock signals to the banks. Relative lengths of control signal paths and clock signal paths may be directly related to each other and inversely related to relative lengths of data paths.

Signal path optimization for read operations in storage devices

Techniques and memory devices are provided in which bit line short circuits are detected and groups of bit lines are masked off. A process tests groups of bit lines which are connected to a sense circuit. A masking latch is provided to store test results for each group of bit lines. Once the testing of a group is completed, the test result is communicated to a controller. Moreover, the same masking latch can store and communicate test results for multiple groups of bit lines which are connected to a sense circuit. In a user mode, a masking latch stores masking data for each group of bit lines. In response to a power on reset, the masking data is loaded into the masking latches and remains there over multiple write and read operation, until a next power on reset occurs.

Memory with bit line short circuit detection and masking of groups of bad bit lines

Apparatuses, systems, and methods are disclosed for an output data path for non-volatile memory. A buffer may include a plurality of buffer stages. A buffer stage width may be a width of an internal bus for a non-volatile memory element. A buffer may include two or more read pointers, updated by an internal controller at different times in response to different portions of a clock signal. A parallel-in serial-out (PISO) component may receive data via an internal data path having a data path width equal to an internal bus width, and may output the data in a series of transfers controlled according to a clock signal, via an output bus having an output bus width narrower than an internal bus width. A PISO component may receive data from a portion of a buffer stage in response to an internal controller updating a read pointer to point to the buffer stage.

Output data path for non-volatile memory

A calibration device for use in a memory system includes a bias circuit providing bias current, and a calibration unit generating a control signal for calibration. The bias circuit includes an internal resistor and measures a second bias current generated by mirroring a first bias current through the internal resistor, and adjusts the second bias current to generate the second bias current in a predetermined range as a third bias current. The calibration unit generates the control signal based on a comparison result between a reference voltage and a voltage generated based on the third bias current through an adjustable resistor.

Calibration device and memory system having the same

A random number generator is disclosed. In some embodiments, the random number generator comprises two cross-coupled inverter chains, wherein each inverter chain comprises an odd number of gates including an input NAND gate; wherein when a clock signal input into the NAND gate of both inverter chains switches from low to high, the inverter chains start toggling until a noise induced phase difference automatically collapses the toggling after a random number of cycles; and wherein a random number generated by the random number generator is based on the random number of cycles.

Growing community of inventors

Santa Clara, CA, United States of America

Yukeun Sim