Toyota Jidosha Kabushiki Kaisha

Japan Fine Ceramics Center

Yukari Tani

Akinori Seki

Noriyoshi Shibata

The present invention provides a method of producing a silicon carbide semiconductor substrate in which a silicon carbide buffer layer doped with germanium and a semiconductor device layer are sequentially laminated on the buffer layer, a silicon carbide semiconductor substrate obtained by the method and a silicon carbide semiconductor in which electrodes are disposed on the silicon carbide semiconductor substrate.

Method of producing silicon carbide semiconductor substrate, silicon carbide semiconductor substrate obtained thereby and silicon carbide semiconductor using the same

A channel layer () for forming a portion of a carrier path between a source electrode () and a drain electrode () is formed on a drift layer (). The channel layer () includes Ge granular crystals formed on the drift layer (), and a cap layer covering the Ge granular crystals.

Silicon carbide semiconductor device and method for manufacturing the same

A semiconductor material having a stepwise surface structure of (0001)-plane terraces and (11-2n)-plane steps [n&#x2267;0] on the SiC substrate, a semiconductor device using the same and a method of producing the semiconductor material in which a carbon-rich surface is formed on the SiC substrate prior to epitaxial growth of an SiC crystal, the carbon-rich surface satisfies the ratio R=(I/I)&#x3e;0.2, wherein I(I) is an integrated intensity of a C1s signal having a peak at the binding energy relating to stoichiometric SiC (in the region of 282.8 eV), and I(I) is an integrated intensity of a C1s signal having a peak at the binding energy relating to graphite, SiC(x&#x3e;1), or SiCH(y&#x3c;1) (in the region of 284.5 eV), as measured by an X-ray photoelectron spectroscopic analyzer (XPS).

Growing community of inventors

Nagoya, Japan

Yukari Tani