Sony Semiconductor Solutions Corporation

Yukari Takeya

Ryoji Suzuki

Hiroyuki Mori

Yusuke Oike

Tomoyuki Hirano

Yoshiharu Kudoh

Yorito Sakano

Shin Iwabuchi

Hirotoshi Nomura

Yoichi Ueda

Ryosuke Matsumoto

Atsushi Okuyama

Hongbo Zhu

Yasufumi Miyoshi

Yoshiaki Tashiro

Keiichi Nakazawa

Shinichi Yoshida

Jun Ogi

Tetsuya Uchida

Takahiro Toyoshima

Masashi Ohura

Atsushi Horiuchi

Hisahiro Ansai

Yoshiya Hagimoto

Hayato Iwamoto

Eizo Motooka

There is provided a imaging device including: an N-type region formed for each pixel and configured to perform photoelectric conversion; an inter-pixel light-shielding wall penetrating a semiconductor substrate in a depth direction and formed between N-type regions configured to perform the photoelectric conversion, the N-type regions each being formed for each of pixels adjacent to each other; a P-type layer formed between the N-type region configured to perform the photoelectric conversion and the inter-pixel light-shielding wall; and a P-type region adjacent to the P-type layer and formed between the N-type region and an interface on a side of a light incident surface of the semiconductor substrate.

Solid-state imaging apparatus and electronic apparatus

To realize miniaturization of a pixel, reduction in noise, and high quantum efficiency, and to improve short-wavelength sensitivity while suppressing inter-pixel interference and variations for each pixel. According to the present disclosure, there is provided an imaging device including: a first semiconductor layer formed in a semiconductor substrate; a second semiconductor layer of a conductivity type opposite to a conductivity type of the first semiconductor layer formed on the first semiconductor layer; a pixel separation unit which defines a pixel region including the first semiconductor layer and the second semiconductor layer; a first electrode which is connected to the first semiconductor layer from one surface side of the semiconductor substrate; and a second electrode which is connected to the second semiconductor layer from a light irradiation surface side that is the other surface of the semiconductor substrate, and is formed to correspond to a position of the pixel separation unit.

Imaging device and signal processing device

Imaging device

A semiconductor manufacturing apparatus includes: a treatment chamber treating a treated film of a wafer using a desired chemical fluid; a film thickness measurement unit measuring an initial film thickness of the treated film before treatment and a final film thickness of the treated film after treatment; and a main body controlling unit calculating a treatment speed of the chemical fluid from the initial film thickness, the final film thickness, and a chemical fluid treatment time taken from the initial film thickness to the final film thickness to calculate a chemical fluid treatment time for a wafer to be treated next from the calculated treatment speed.

Semiconductor manufacturing apparatus

Growing community of inventors

Kanagawa, Japan

Yukari Takeya