Shin-etsu Handotai Co., Ltd.

Yukari Suzuki

Jun Ikeda

Masataka Watanabe

Hitoshi Ikeda

Jun-ya Ishizaki

Shunichi Ikeda

A transparent conductive semiconductor substratecomprising a light emitting layer sectionis directly bonded on one of main surfaces on a main compound semiconductor layercomposed of Group III-V compound semiconductor, wherein an alkali metal atom concentration on a bonded boundary surface between the main compound semiconductor layerand the transparent conductive semiconductor substrateis adjusted to be equal to or greater than 1&#xd7;10atoms/cmand equal to or less than 2&#xd7;10atoms/cm. Herewith, it provides a light emitting device capable of sufficiently decreasing boundary surface resistance between the light emitting layer section and the transparent conductive semiconductor substrate.

Light-emitting device and method for fabricating the same

A method for manufacturing a compound semiconductor substrate includes at least the processes of epitaxially growing a quaternary light emitting layer composed of AlGaInP on a GaAs substrate; vapor-phase growing a p-type GaP window layer on a first main surface of the quaternary light emitting layer, the first main surface being opposite to the GaAs substrate; removing the GaAs substrate; and epitaxially growing an n-type GaP window layer on a second main surface of the light emitting layer, the second main surface being located at a side where the GaAs substrate is removed. The method includes the process of performing a heat treatment under a hydrogen atmosphere containing ammonia after the process of removing the GaAs substrate and before the process of epitaxially growing the n-type GaP window layer.

Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device

A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.

Light emitting device and method of fabricating the same

A light emitting device wafer is fabricated, having a light emitting layer section, composed of AlGaInP, based on a double heterostructure and a GaP light extraction layer disposed on the light emitting layer portion, having a first main surface thereof appearing on the first main surface of the wafer, so as that a P-rich off-angled {100} surface, having a higher existence rate of P atoms than an exact {100} surface, appears on the first main surface the GaP light extraction layer. The main first surface of the GaP light extraction layer is etched with an etching solution FEA so as to form surface roughening projections. Therefore, it provides a method of fabricating a light emitting device capable of applying surface roughening easily to the GaP light extraction surface having the {100} surface, off-angled to be P-rich, as a main surface thereof.

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Annaka, Japan

Yukari Suzuki