Fujitsu Corporation

Yukari Mihara

Satoshi Takechi

Satoru Mihara

Yuko Nakamura

Kouji Nozaki

A process for forming a resist mask pattern includes the steps of forming a resist layer of organic material in a multilevel resist process on a layer to be etched, and selectively etching a planarizing lower layer used in the resist layer by using an etching gas of oxygen under a plasma condition, in which a compound gas of at least one element selected from the group consisting of B, Si, Ti, Al, Mo, W and S is added to the etching gas. For example, the compound gas comprises BCl.sub.3, BH.sub.3, TiCl.sub.4, S.sub.2 Cl.sub.2, SiCl.sub.4 or the like. During the etching, a compound oxide, e.g., B.sub.2 O.sub.3, SiO.sub.2 or the like, is deposited on sidewalls of the lower layer to form a protective layer which prevents undercutting.

Process for forming resist mask pattern

Disclosed is a process for the production of a semiconductor device, which comprises forming a film of a resist composed of a substance generating an acid catalyst by being irradiated with radiation and a polymer having an Si-containing group that can be eliminated by the acid catalyst, irradiating the resist film with radiations and patterning the irradiated resist film by oxygen reactive ion etching, ECR etching or reactive ion beam etching. This process is advantageously used for preparing a semiconductor device by the two-layer resist method.

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Yokohami, Japan

Yukari Mihara