Toray Industries, Inc.

Yukari Jo

Jun Tsukamoto

Seiichiro Murase

Daisuke Kitazawa

Masao Tomikawa

Junji Wakita

Takenori Fujiwara

Junji Mata

The present invention is based on a polyimide precursor having unit structures represented by general formula (1) and unit structures represented by general formula (2), provides a polyimide precursor for which film whitening, cracking and bubbling do not occur regardless of film baking conditions, and provides a flexible TFT array, a flexible color filter, and a flexible substrate with a gas barrier layer using the polyimide precursor, and a flexible display device, etc. using same. (In general formulas (1) and (2), X-Xeach independently represents a hydrogen atom, C1 to C10 monovalent organic group or C1 to C10 monovalent alkylsilyl group. Ris represented by general formula (3) and Ris represented by general formula (4).) (In general formula (4), Rand Reach independently represents a C1 to C10 monovalent organic group.) 

Polyimide precursor, polyimide, flexible substrate prepared therewith, color filter and production method thereof, and flexible display device

To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component. A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1):RSi(OR)&#x2003;&#x2003;(1),

Gate insulating material, gate insulating film and organic field-effect transistor

A carbon nanotube composite in which a conjugated polymer containing repeating units containing a fused heteroaryl unit having a nitrogen-containing double bond in the ring, and a thiophene unit is attached to at least a part of the surface of a carbon nanotube. The present invention reduces the hysteresis of a field-effect transistor having a semiconductor layer containing a carbon nanotube.

Carbon nanotube composite, organic semiconductor composite, and field-effect transistor

The present invention provides an organic semiconductor composite containing a certain thiophene compound and carbon nanotubes, which can be formed into a film by a coating process such as an inkjet process, has high charge mobility and can maintain a high on/off ratio even in air, an organic transistor material and an organic field effect transistor.

Organic semiconductor composite, organic transistor material and organic field effect transistor

A photovoltaic device with high photoelectric conversion efficiency includes an electron donating organic material for photovoltaic devices containing a conjugated polymer represented by formula (1): wherein Rto Rmay be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an alkoxy group and an aryl group; Rand Rmay be the same or different from each other and are each selected from the group consisting of hydrogen, an alkyl group, an aryl group, a heteroaryl group and halogen; W, X, Y and Z may be the same or different from each other and are each selected from the group consisting of a single bond, an arylene group, a heteroarylene group, an ethenylene group, and an ethynylene group; m is 0 or 1; n is within a range of 1 to 1000.

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Shiga, Japan

Yukari Jo