Sharp Kabushiki Kaisha Corporation

Yukari Inoguchi

Masamichi Harada

Tadasu Izumi

Tetsuroh Murakami

Eiji Kametani

Nobuyuki Watanabe

A semiconductor light emitting device in the present invention is formed by laminating an epitaxial layerincluding an AlGaInP active layer and a second waferwhich transmits light derived from the active layer. The crystal axes of the epitaxial layerand the second waferare generally aligned with each other and are in the range of &#x2212;15&#xb0; to +15&#xb0; with respect to a lateral face {} of the second wafer. This semiconductor light emitting device, which is a joining type with high external emission efficiency, allows uniform wafer bonding to be achieved over the entire wafer face with ease and with a high yield without causing bonding failure and wafer cracks.

Semiconductor light emitting device and manufacturing method therefor

A method of manufacturing a light emitting diode, which includes the steps of bringing a semiconductor substrate of p-type or n-type into contact with a growth solution at a high temperature and thereafter, lowering the temperature so as to form a monocrystalline epitaxial layer of the same type as the semiconductor substrate on the semiconductor substrate, subsequently, further lowering the above temperature to form a first monocrystalline epitaxial layer of a reverse type to the epitaxial layer on the epitaxial layer and then, cutting off the growth solution to form an epitaxial wafer as a result, a growth solution to contact the first epitaxial layer of a epitaxial wafer at a high temperature, and thereafter, the temperature is lowered to form a second monocrystalline epitaxial layer of the same kind and type as the first epitaxial layer on the first epitaxial layer.

Method of manufacturing a light emitting diode

Method of manufacturing a light emitting diode using LPE at different

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Nara, Japan

Yukari Inoguchi