Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Toshiba Electronic Devices & Storage Corporation

Yukako Murakami

Ikuo Uematsu

Masaaki Hirakawa

Yoshihiro Ogawa

Kazuhide Abe

Akira Yoshioka

Hidetoshi Fujimoto

Atsuko Iida

Tetsuya Ohno

Yasunobu Saito

Toshiyuki Naka

Takaaki Yasumoto

Katsuhiro Sato

Hideaki Hirabayashi

Takahiro Terada

Naoko Yanase

Takako Motai

Miki Yumoto

Yoshinori Kitamura

Masaru Furukawa

Shingo Masuko

Takeshi Uchihara

Kaori Deura

Yuji Hashimoto

Tasuku Ono

Yasunari Yagi

According to one embodiment, a stripping liquid is provided. The stripping liquid is for removing a support plate from a stack. The stack includes a substrate, the support plate, and an adhesive. The Adhesive is placed between the substrate and the support plate. The adhesive includes a compound. The compound has a first functional group and a second functional group differing from each other. The stripping liquid includes a first solvent and a second solvent. The second solvent have a polarity higher than the first solvent.

Stripping liquid, stripping method, and electronic-component fabricating method

According to one embodiment, an etching solution used for etching of silicon nitride is provided. The etching solution includes phosphoric acid, an acid, silicic acid compound, and water. The phosphoric acid has a first acid dissociation exponent pK. The acid has an acid dissociation exponent smaller than the first acid dissociation exponent pK. A mass ratio M/Mof mass Mof the phosphoric acid to mass Mof the acid having the acid dissociation exponent smaller than the first acid dissociation exponent pKis within a range of 0.82 or more and 725 or less.

Etching solution, etching method, and method for manufacturing an electronic component

A substrate treatment apparatus according to an embodiment includes a treatment part, a cyclic path, a heater, and a first injector. The treatment part is supplied with an etchant containing phosphoric acid and a silica deposition suppressor, and brings a substrate having a silicon nitride film on a surface thereof into contact with the etchant to remove the silicon nitride film from the substrate. The cyclic path circulates the etchant in the treatment part. The heater heats the etchant. The first injector is provided on the cyclic path, and injects the silica deposition suppressor into the etchant.

Substrate treatment apparatus, substrate treatment method, and etchant

A semiconductor device includes a GaN-based semiconductor layer, a source electrode on the GaN-based semiconductor layer, a drain electrode on the GaN-based semiconductor layer, and a gate electrode formed on the GaN-based semiconductor layer between the source electrode and the drain electrode. A first layer is in contact with the GaN-based semiconductor layer between the gate electrode and the drain electrode.

Semiconductor device

Growing community of inventors

Chigasaki, Japan

Yukako Murakami