Kabushiki Kaisha Toyota Chuo Kenkyusho

Toyota Jidosha Kabushiki Kaisha

Yuka Yamada

Kazuyuki Nakanishi

Takashi Iseki

Yasuhiro Ozawa

Masafumi Koizumi

Takayuki Kikuchi

Hiroyuki Mori

Hajime Hasegawa

Seiji Mizuno

Shingo Ohta

Naoki Ueda

Tadashi Oshima

Hiroshi Osada

Hiroshi Hohjo

Hideaki Matsuoka

Toshio Horie

Masanori Usui

Katsumi Sato

Ken-ichi Suzuki

Hirohiko Hisano

Kuroudo Maeda

Gaku Kitahara

Atsushi Kawamoto

Yoshiyuki Funaki

Tadayoshi Matsumori

Kyouji Kondo

Katsutoshi Fujisawa

Hidehiko Kimura

Tsuguo Kondoh

Ken-Ichi Suzuki

A thermal conductive stress relaxation structure is interposed between a high-temperature substance and a low-temperature substance to conduct heat in a heat-transfer direction from the high-temperature substance to the low-temperature substance. The structure includes an assembly configured such that a thermal conductive material gathers in a non-bonded state having stress relaxation effect. Such an assembly is a rolled-up body configured such that a carbon-based sheet material and a metal-based sheet material are alternately rolled up, for example. This structure has one or more interfaces at which adjacent parts can slide, thereby dividing a deformable region to relax the thermal stress. It has a low rigidity and can thus deform to release the thermal stress. The structure can suppress the thermal stresses and the shape changes that would be generated in the high-temperature substance and the low-temperature substance, and each physical body located there between.

Thermal conductive stress relaxation structure

The oriented amorphous carbon film contains C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sphybrid orbital (Csp) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction. This film has a novel structure and exhibits a high electric conductivity. This film can be formed by DC plasma CVD method in which an electric discharge is generated by applying a voltage of not less than 1500 V to reaction gas including at least one kind of compound gas selected from gas of a carbocyclic compound containing Cspand gas of an N-containing heterocyclic compound containing Csp, and nitrogen and/or silicon, and nitrogen gas.

Oriented amorphous carbon film and process for forming the same

A bipolar plate for a fuel cell comprises a substrate formed of stainless steel; an oriented amorphous carbon film formed at least on a surface of the substrate facing an electrode, and containing C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sphybrid orbital (Csp) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction; a mixed layer generated in an interface between the substrate and the oriented amorphous carbon film and containing at least one kind of constituent atoms of each of the substrate and the oriented amorphous carbon film; and a plurality of projections protruding from the mixed layer into the oriented amorphous carbon film and having a mean length of 10 to 150 nm.

Bipolar plate for fuel cell and method for producing the same

This invention adopts plasma-enhanced chemical vapor deposition using the apparatus including a chamber, a pair of rotary electrode reels including a feed-out reel and a take-up reel, a plasma source, a material gas supplier, and an exhaust unit, and includes applying a negative voltage applied to the rotary electrode reels from the plasma source while a conductive substrate is fed-out from the feed-out reel and is wound on the take-up reel so that the entire surface of the substrate portion between reels contacts the material gas, whereby plasma sheath is formed along the surface of the substrate portion between reels, and the material gas is activated in the plasma sheath and thus contacts the surface of the substrate, thus forming the film on the surface of the substrate.

Method and apparatus for forming film

A method of manufacturing a titanium-based material includes: rolling a titanium base material via rolling oil that includes carbon to form a rolling-altered layer that includes titanium carbide on a surface of the base material; and depositing a carbon film on the surface on which the rolling-altered layer has been formed.

Titanium-based material, method of manufacturing titanium-based material, and fuel cell separator

The amorphous carbon film of the present invention is an amorphous carbon film comprising carbon and hydrogen, wherein the amorphous carbon film contains not more than 30 atomic % (excluding 0%) of hydrogen and, when the entire amount of the carbon is taken as 100 atomic %, carbon having an sphybrid orbital is present in an amount of not less than 70 atomic % and less than 100 atomic %. Conductivity is imparted to an amorphous carbon film by controlling the contents of hydrogen, Cspand the like to increase a structure comprising Csp. This amorphous carbon film can be formed by plasma CVD using a reaction gas containing one or more gases selected from a carbocyclic compound gas containing carbon having an sphybrid orbital, and a heterocyclic compound gas containing carbon having an sphybrid orbital and silicon and/or nitrogen. By forming the amorphous carbon film on a surface of a substrate, a conductive member can be obtained.

Amorphous carbon film, process for forming amorphous carbon film, conductive member provided with amorphous carbon film, and fuel cell separator

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Toyota, Japan

Yuka Yamada