Tokyo Electron Limited

Yuka Nakasato

Manabu Honma

Masashi Takahashi

Tomohiro Saito

Miki Ouchi

Kohei Doi

An abnormality detecting apparatus detects an abnormality of a semiconductor manufacturing apparatus, and includes: a data generator configured to generate correlation data based on a value of a first monitoring target and a value of a second monitoring target that are correlated with each other; a calculator configured to calculate a slop of a regression line of the correlation data based on the correlation data; and an abnormality determination device configured to determine an abnormality of the semiconductor manufacturing apparatus based on the slope of the regression line.

Abnormality detecting apparatus, semiconductor manufacturing apparatus, and abnormality detecting method

A failure detection system detects a failure of a sensor that detects a state of a semiconductor manufacturing apparatus. The failure detection system includes a generation unit configured to generate times-series data of information on a detection value of the sensor during a determination period, a calculation unit configured to calculate a regression line of the times-series data, and a failure determination unit configured to determine whether the sensor has failed based on a slope of the regression line.

Failure detection system and failure detection method

An apparatus for forming a thin film by repeating, plural times, a cycle including supplying and adsorbing a precursor gas onto a substrate and generating a reaction product by allowing the precursor gas on the substrate to react with a reaction gas, which includes: a main precursor gas supply part for supplying the precursor gas; a reaction gas supply part for supplying the reaction gas; an adjustment-purpose precursor gas supply part for supplying an adjustment-purpose precursor gas to adjust an in-plane film thickness distribution of the thin film; and a controller for outputting a control signal to execute a step of forming the thin film using the main precursor gas supply part and the reaction gas supply part, and subsequently a step of supplying the adjustment-purpose precursor gas from the adjustment-purpose precursor gas supply part to compensate for a film thickness of a portion having a relatively thin film thickness.

Film-forming apparatus and film-forming method

A film forming method comprises loading a substrate on a rotary table, forming an adsorption region for adsorbing a raw material gas to the substrate by discharging the raw material gas from multiple discharge ports, forming a reaction region, to which a reaction gas is supplied, at a position spaced from the adsorption region, separating an atmosphere of the adsorption region and an atmosphere of the reaction region by exhausting and by supplying a purge gas, forming a film by performing a cycle a plurality of times to deposit the reaction product on the substrate, the cycle comprising passing the substrate through the adsorption region and the reaction region and setting a combination of flow rates of the raw material gas for a first pattern in order to perform the cycle with the first pattern and for a second pattern in order to perform the cycle with the second pattern.

Growing community of inventors

Oshu, Japan

Yuka Nakasato