Kabushiki Kaisha Toshiba

Yuka Itano

Sadayuki Yoshitomi

Naoki Wakita

Fumie Fujii

A circuit simulation apparatus according to an embodiment of the present invention calculates a set value of a SPICE parameter of a MOSFET to carry out a variation analysis on a semiconductor circuit including the MOSFET. The apparatus includes a storage part configured to store an intermediate model expression that includes a variable related to a manufacture condition or device structure of the MOSFET as a variable affecting variation characteristics of the MOSFET, the intermediate model expression being formed with a universal function having a physical correlation between a physical amount defined by the variable and the SPICE parameter, a setting part configured to set information about the variable included in the intermediate model expression, a calculation part configured to calculate the set value of the SPICE parameter by using the information set in the setting part and the intermediate model expression stored in the storage part, and an output part configured to output process variation dependency of the semiconductor circuit.

Variation distribution simulation apparatus and method, and recording medium

In one embodiment, a SPICE corner model generating method for generating a SPICE corner model of an MOSFET includes preparing a table of a ratio X regarding a combination of two kinds of MOSFETs selected from N kinds of MOSFETs, the ratio X being a magnitude of a variation of an MOSFET in a case where directions of variations of the two kinds of MOSFETs are opposite directions to a magnitude of a variation of an MOSFET in a case where the directions of the variations of the two kinds of MOSFETs are the same direction, where N is an integer of 2 or greater. The method further includes reading out, when a combination of two kinds of MOSFETs is designated among the N kinds of MOSFETs, a value of the ratio X corresponding the designated combination from the table of the ratio X. The method further includes forming two kinds of corner models of opposite directional variations, the two kinds of corner models including a first corner model generated by applying the value of the ratio X to a fast-side corner of a first MOSFET of the two kinds of MOSFETs and to a slow-side corner of a second MOSFET of the two kinds of MOSFETs, and a second corner model generated by applying the value of the ratio X to a slow-side corner of the first MOSFET and to a fast-side corner of the second MOSFET.

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Yokohama, Japan

Yuka Itano