Semiconductor Energy Laboratory Co., Ltd.

Yujiro Sakurada

Tomokazu Yokoi

Shunpei Yamazaki

Yasuhiro Jinbo

Tetsuya Kakehata

Yuji Egi

A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

Semiconductor device and method for manufacturing the semiconductor device

A non-single-crystal semiconductor layer is formed over a substrate, and then a single crystal semiconductor layer is formed over part of the non-single-crystal semiconductor layer. Thus, a semiconductor element of a region which requires a large area (e.g. a pixel region in a display device) can be formed using the non-single-crystal semiconductor layer, and a semiconductor element of a region which requires high speed operation (e.g. a driver circuit region in a display device) can be formed using the single crystal semiconductor layer.

Growing community of inventors

Kanagawa, Japan

Yujiro Sakurada