Sharp Kabushiki Kaisha Corporation

Yujiro Ikeda

Takao Kinoshita

A film forming method includes forming a metal or silicide film by a deposition apparatus which is cleaned by passing a cleaning gas therethrough and subjected to an idle deposition using a material for the metal or silicide film intended to be formed within 24 hours after cleaning. Thereby the content of a halogen element in the formed film is reduced.

Film forming method and film formed by the method

A process for forming a contact which comprises (i) forming on a semiconductor substrate a LOCOS oxide film and a conductive pattern thereon, respectively, (ii) forming a first dielectric film and a second dielectric film on a semiconductor substrate including the LOCOS oxide film and the conductive pattern, respectively, and applying a heat treatment to the substrate, (iii) depositing a SiO film while the second dielectric film in a slant or tapered form formed over the edge portion of the conductive pattern is etched, wherein the deposition and etching is conducted by using Bias ECR method, thereby providing uniform thickness of each of the first and second dielectric films and the SiO film at a predetermined contact forming part, and (iv) forming a contact at the predetermined contact forming part.

Process for forming contacts

A method for forming a contact plug comprising steps of depositing on a semiconductor substrate provided with a base device an interlayer insulator consisting of lowermost, intermediate and uppermost layers in which the intermediate layer is less sensitive to an etchant which is capable of dissolving the lowermost layer; subjecting the resultant substrate to a thermal treatment to planarize the surface of the uppermost layer; forming a contact hole by dry-etching at an intended contact region of the interlayer insulator; subjecting the contact hole to wet-etching with an etchant which is capable of dissolving the lowermost layer of the interlayer insulator to form a stepped portion between the edges of the lowermost layer and the intermediate layer in the contact hole; and depositing a metal in the resulting contact hole to form a contact plug, thereby preventing the contact plug from peeling off the substrate.

Growing community of inventors

Ikoma, Japan

Yujiro Ikeda