Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Yujiro Hara

Masahiko Akiyama

Yutaka Onozuka

Tsuyoshi Hioki

Mitsuo Nakajima

Goh Itoh

Miki Mori

Tomomasa Ueda

Nobuyoshi Saito

Hisao Fujiwara

Masayuki Saito

Haruhiko Okumura

Rei Hasegawa

Yumi Fukuda

Masahiko Yamamoto

Hitoshi Kobayashi

Koji Asakawa

Tatsuo Saishu

Makoto Mizukami

Toshiro Hiraoka

Kazuki Taira

Rieko Fukushima

Mitsushi Ikeda

Shintaro Nakano

Kentaro Miura

Masaki Atsuta

Shuichi Uchikoga

Yukio Kizaki

Masao Tanaka

Rieko Iida

Takeshi Yamaguchi

Tomio Ono

Hajime Yamaguchi

Hiroshi Kono

Toshiyuki Oka

Takuma Suzuki

Hideyuki Nakao

Akira Kinno

Akio Amano

Masayuki Nakamoto

Isao Amemiya

Yukitami Mizuno

Keiji Sugi

Kouhei Suzuki

Kohki Takatoh

Shuichi Saito

Katsuhisa Tanaka

Shunsuke Asaba

Hiroyuki Nagata

Masaru Furukawa

Yoshiko Tsuji

Yoshifumi Ogawa

Momoko Takemura

Yuji Kusumoto

Masanori Nagata

A semiconductor device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type on the first region, and a third silicon carbide region of a second conductivity type on the second region. Fourth and fifth silicon carbide region of the first conductivity type are on the third region. A first electrode has a first portion between the fourth region and fifth region in a first direction. A metal silicide layer is between the first portion and the third region, between the first portion and the fourth region in the first direction, and between the first portion and the fifth silicon carbide region in the first direction.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device according to an embodiment includes a silicon carbide layer having first and second planes; first and second trenches extending in a first direction; first and second gate electrodes; a first silicon carbide region of a first conductivity type; a plurality of second silicon carbide regions of a second conductivity type between the first silicon carbide region and the first plane, located between the first trench and the second trench, and separated from each other in the first direction; a fourth silicon carbide region of the second conductivity type between two of the second silicon carbide regions and contacting the second silicon carbide region; a fifth silicon carbide region of the second conductivity type between the two second silicon carbide regions and contacting the second silicon carbide region; a first electrode contacting the first silicon carbide region; and a second electrode.

Semiconductor device

According to one embodiment, a thin film transistor includes: a substrate; a semiconductor layer; first and second insulating films; and gate, source and drain electrodes. The semiconductor layer is provided on the substrate. The semiconductor layer is made of an oxide having indium. The semiconductor layer has first and second regions and other region. The first insulating film covers a top face of the other region. The second insulating film covers at least a pair of side surfaces of the semiconductor layer. The second insulating film is formed under a condition different from that for the first insulating film. The gate electrode is provided on the first and second insulating films or below the semiconductor layer. The source and drain electrodes are provided on the first and second regions, respectively. The drain and source electrodes sandwich the pair of the side surfaces of the semiconductor layer.

Thin film transistor, manufacturing method of same, and display device

According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.

Thin film transistor and method for manufacturing the same

A display device includes a plurality of pixel portions provided in a matrix form. Each of the pixel portions includes a pixel circuit and a light-emitting element. The pixel circuit includes a driving transistor connected between the light-emitting element and a first power supply line, a capacitor connected at its one end to a gate of the driving transistor, a switching transistor connected between the other end of the capacitor and a signal line, a threshold voltage detection transistor connected between a connecting point between the light-emitting element and the driving transistor, and a connecting point between the capacitor and the switching transistor, and a reset transistor connected between a connecting point between the driving transistor and the first power supply line, and a connecting point between the gate of the driving transistor and the capacitor, and connected at its gate to a reset control line.

Display device and method of driving the same

According to one embodiment, an organic EL display includes a substrate and a pixel. The pixel is disposed on the substrate and includes a first color displaying portion and a second color displaying portion. The first color displaying portion has a first organic light emitting layer. The second color displaying portion has a second organic light emitting layer having an emission spectrum different from an emission spectrum of the first organic light emitting layer. The first color displaying portion has two sub-pixels. One of the two sub-pixels has a color filter.

Organic elelectroluminescent display

A method of manufacturing an active matrix type display device, which is reliable and flexible, is provided. An active matrix type display device according to an aspect of the present invention includes: a first substrate, which is flexible; a thin glass layer provided on the first substrate via an adhesion layer, and having projections and depressions on a surface thereof opposing to the first substrate, the projections and depressions having rounded tips and bottoms; active elements provided on the thin glass layer, each active element corresponding to a pixel; a display provided above the thin glass layer, and driven by the active elements to display an image pixel by pixel; and a second substrate provided on the display, and having an opposing electrode formed thereon.

Active matrix type display device and method of manufacturing the same

An X-ray detector includes: a semiconductor substrate to generate charged particles by an irradiation of an X-ray; a plurality of pixel electrodes arranged in matrix on an X-ray incident surface of the semiconductor substrate and applied with a first electric potential to detect the charged particles; and a platy electrode provided on a surface opposite to the X-ray incident surface of the semiconductor substrate and applied with a second electric potential different from the first electric potential.

X-ray detector

An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vis applied when detecting the photocurrent, the reverse bias voltage Vsatisfying a following relation.V&#x3c;V&#x3c;V

Optical sensor element and method for driving the same

An active matrix substrate comprises a substrate, a plurality of adhesion parts provided on the substrate so as to have substantially the same height, and a plurality of active elements provided on the plurality of adhesion parts, respectively, each of the plurality of adhesion parts including a height control member and an adhesive.

Active matrix substrate with height control member

Method of manufacturing active matrix substrate with height control member

A display device disclosed herein comprises: a display part including a first thin plate having flexibility and a second thin plate having flexibility, the second thin plate being provided on the first thin plate; a fixing portion which fixes the first thin plate and the second thin plate together on a first direction within each main surface of the first and second thin plates; and a close contact member which is provided in a second direction perpendicular to the first direction within the main surface, and which brings the first thin plate and the second thin plate into close contact.

Display device having flexibility with a contact member allowing the first and second plates to be slid in the second direction

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Yokohama, Japan

Yujiro Hara