Semiconductor Components Industries, LLC

Nxp B.v.

Nxp USA, Inc.

Yujing Wu

Xin Lin

Ronghua Zhu

Zhihong Zhang

Jeffrey Pearse

Xu Cheng

Keith G Kamekona

Chandrasekhara Sudhama

Weizhong Cai

Pete Rodriquez

A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.

LDMOS with an improved breakdown performance

A device () includes a substrate (-) with an upper semiconductor layer, buried semiconductor layer, and a DTI structure (-) defining an active device region; a dummy LDMOS device () in the active device region which includes a grounded drain (D) in a drift region (), a source (S, S) in a body region () which extends to contact the buried semiconductor layer, a gate electrode (G-G) formed so that the source and at least part of the gate electrode are connected with the body implant region, and a buffering semiconductor layer portion () adjacent the DTI structure; and one or more active LDMOS devices () positioned in the active device region to be separated from the DTI structure by the dummy LDMOS device () which reduces an electric field across the sidewall insulator layer () in the DTI structure.

Apparatus for extension of operation voltage

A semiconductor switching device () is formed on a semiconductor substrate () having a trench () formed on one of its surfaces (). A control electrode () activates a wall of the trench to form a conduction channel (). A first conduction electrode () is disposed on the semiconductor substrate to have a first doped region () for receiving a current and a second doped region () for routing the current to the conduction channel.

Semiconductor bidirectional switching device

A semiconductor switching device ( ) is formed on a semiconductor substrate ( ) having a trench ( ) formed on one of its surfaces ( ). A control electrode ( ) activates a wall of the trench to form a conduction channel ( ). A first conduction electrode ( ) is disposed on the semiconductor substrate to have a first doped region ( ) for receiving a current and a second doped region ( ) for routing the current to the conduction channel.

Semiconductor bidirectional switching device and method

A method of making a semiconductor device ( ) having a low permittivity region ( ) includes forming a first layer ( ) over a surface of a trench ( ), and etching through an opening ( ) in the first layer that is smaller than a width (W ) of the trench to remove a first material ( ) from the trench. A second material ( ) is deposited to plug the opening to seal an air pocket ( ) in the trench. The low permittivity region features air pockets with a high volume because the small size of the opening allows the second material to plug the trench without accumulating significantly in the trench.

Growing community of inventors

Chandler, AZ, United States of America

Yujing Wu