Mie Fujitsu Semiconductor Limited

Suvolta, Inc.

Yujie Liu

Lucian Shifren

Scott E Thompson

Pushkar Ranade

Thomas Hoffmann

Sameer S Pradhan

Teymur Bakhishev

Dalong Zhao

Sung Hwan Kim

Michael Duane

Lingquan Wang

Lance A Scudder

Weimin Zhang

Jing Wang

Sachin R Sonkusale

Paul E Gregory

A transistor and method of fabrication thereof includes a screening layer formed at least in part in the semiconductor substrate beneath a channel layer and a gate stack, the gate stack including spacer structures on either side of the gate stack. The transistor includes a shallow lightly doped drain region in the channel layer and a deeply lightly doped drain region at the depth relative to the bottom of the screening layer for reducing junction leakage current. A compensation layer may also be included to prevent loss of back gate control.

Method for fabricating a transistor with reduced junction leakage current

High uniformity screen and epitaxial layers for CMOS devices

A semiconductor transistor structure fabricated on a silicon substrate effective to set a threshold voltage, control short channel effects, and control against excessive junction leakage may include a transistor gate having a source and drain structure. A highly doped screening region lies is embedded a vertical distance down from the surface of the substrate. The highly doped screening region is separated from the surface of the substrate by way of a substantially undoped channel layer which may be epitaxially formed. The source/drain structure may include a source/drain extension region which may be raised above the surface of the substrate. The screening region is preferably positioned to be located at or just below the interface between the source/drain region and source/drain extension portion. The transistor gate may be formed below a surface level of the silicon substrate and either above or below the heavily doped portion of the source/drain structure.

Deeply depleted MOS transistors having a screening layer and methods thereof

Transistor having reduced junction leakage and methods of forming thereof

Growing community of inventors

San Jose, CA, United States of America

Yujie Liu