Renesas Electronics Corporation

Hitachi, Ltd.

Renesas Technology Corp.

Fuji Xerox Co., Ltd.

Other

Kyocera Corporation

Yuji Yatsuda

Yoshito Nakazawa

Takaaki Hagiwara

Shinichi Minami

Ryuji Kondo

Yokichi Itoh

Hitoshi Matsuura

Tsuyoshi Kachi

Masatada Horiuchi

Masashi Horiguchi

Masakazu Aoki

Osamu Minato

Toru Kaga

Katsumi Ogiue

Fujio Moriguchi

Takahiro Onai

Akihisa Uchida

Kazuo Nakazato

Katsuaki Takagi

Nobuhisa Kato

Shinichi Yasunaga

Mitsumasa Narahara

Yasunao Misawa

Ching F Yeh

Kazumi Yamauchi

Shunichi Yamauchi

Ching Fa Yeh

Ching-Fa Yeh

A semiconductor device including a field-effect transistor having source and drain source regions, first and second gate electrodes and a protective diode connected to the transistor. The first gate electrode is formed over a first gate insulating film in a lower part of a trench. The second gate electrode is formed over a second gate insulating film in an upper part of the trench. The first gate electrode includes a first polysilicon film, and the second gate electrode includes a second polysilicon film, wherein an impurity concentration of the first polysilicon film is lower than an impurity concentration of the second polysilicon film.

Trench gate semiconductor device with dummy gate electrode and manufacturing method of the same

Semiconductor device and manufacturing method of the same

A semiconductor device having a field-effect transistor, including a trench in a semiconductor substrate, a first insulating film in the trench, an intrinsic polycrystalline silicon film over the first insulating film, and first conductivity type impurities in the intrinsic polycrystalline silicon film to form a first conductive film. The first conductive film is etched to form a first gate electrode in the trench. A second insulating film is also formed in the trench above the first insulating film and the first gate electrode, and a first conductivity type doped polycrystalline silicon film, having higher impurity concentration than the first gate electrode is formed over the second insulating film. The doped polycrystalline silicon film is provided in an upper part of the trench to form a second gate electrode.

A method for manufacturing a semiconductor device having a field-effect transistor, including forming a trench in a semiconductor substrate, forming a first insulating film in the trench, forming an intrinsic polycrystalline silicon film over the first insulating film, and introducing first conductive type impurities into the intrinsic polycrystalline silicon film to form a first conductive film. The first conductive film is etched to form a first gate electrode in the trench. Next, a second insulating film is formed in the trench above the first insulating film and the first gate electrode, and a first conductivity type doped polycrystalline silicon film, having higher impurity concentration than the first gate electrode is formed over the second insulating film. The doped polycrystalline silicon film, upper part of the trench ton form a second gate electrode.

A gate trenchis formed in a semiconductor substrate. The gate trenchis provided with a gate electrodeformed over a gate insulating film. A portion of the gate electrodeprotrudes from the semiconductor substrate, and a sidewallis formed over a side wall portion of the protruding portion. A body trenchis formed in alignment with an adjacent gate electrode. A cobalt silicide filmis formed over a surface of the gate electrodeand over a surface of the body trench. A plugis formed using an SAC technique.

Semiconductor device and method of manufacturing the same

In a power MISFET having a trench gate structure with a dummy gate electrode, a technique is provided for improving the performance of the power MISFET, while preventing electrostatic breakdown of a gate insulating film therein. A power MISFET having a trench gate structure with a dummy gate electrode, and a protective diode are formed on the same semiconductor substrate. The protective diode is provided between a source electrode and a gate interconnection. In a manufacturing method of such a semiconductor device, a polycrystalline silicon film for the dummy gate electrode and a polycrystalline silicon film for the protective diode are formed simultaneously. A source region of the power MISFET and an n-type semiconductor region of the protective diode are formed in the same step.

Semiconductor device

Growing community of inventors

Tokyo, Japan

Yuji Yatsuda