Ihp Gmbh-innovations for High Performance Microelectronics/leibniz-institut Fur Innovative Mikroelektronik

Ihp Gmbh - Innovations for High Performance

Yuji Yamamoto

Bernd Heinemann

Dieter Knoll

Bernd Tillack

Lars Zimmermann

Stefan Lischke

Andreas Trusch

A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.

Germainium pin photodiode for integration into a CMOS or BICMOS technology

A method of depositing polycrystalline silicon exclusively on monocrystalline first silicon surface portions of a substrate surface which besides the first surface portions additionally has insulator surface portions, comprising the steps of depositing boron on the first silicon surface portions in an amount which in relation to the first silicon surface portions respectively corresponds to more than a monolayer of boron, and depositing silicon on the first silicon surface portions treated in that way.

Selective growth of polycrystalline silicon-containing semiconductor material on a silicon-containing semiconductor surface

Growing community of inventors

Frankfurt-am-Main, Germany

Yuji Yamamoto