Sumitomo Chemical Company, Limited

National Institute of Advanced Industrial Science and Technology

The University of Tokyo

Yuji Urabe

Masahiko Hata

Tetsuji Yasuda

Shinichi Takagi

Masafumi Yokoyama

Hisashi Yamada

Mitsuru Takenaka

Noriyuki Miyata

Noboru Fukuhara

Hideki Takagi

Taro Itatani

Osamu Ichikawa

Tatsuro Maeda

Hiroyuki Ishii

There is provided a method of producing a semiconductor wafer, including: forming a compound semiconductor layer on a base wafer by epitaxial growth; cleansing a surface of the compound semiconductor layer by means of a cleansing agent containing a selenium compound; and forming an insulating layer on the surface of the compound semiconductor layer. Examples of the selenium compound include a selenium oxide. Examples of the selenium oxide include HSeO. The cleansing agent may further contain one or more substances selected from the group consisting of water, ammonium, and ethanol. When the surface of the compound semiconductor layer is made of InGaAs (0&#x2266;x&#x2266;1), the insulating layer is preferably made of AlO, and AlOis preferably formed by ALD.

Method of producing semiconductor wafer, and semiconductor wafer

A semiconductor substrate includes a substrate, an insulating layer, and a semiconductor layer. The insulating layer is over and in contact with the substrate. The insulating layer includes at least one of an amorphous metal oxide and an amorphous metal nitride. The semiconductor layer is over and in contact with the insulating layer. The semiconductor layer is formed by crystal growth.

Semiconductor substrate, field-effect transistor, integrated circuit, and method for fabricating semiconductor substrate

Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of InGaAsP(0&#x3c;x1&#x2266;1, 0&#x2266;y1&#x2266;1), the second semiconductor crystal layer is made of InGaAsP(0&#x2266;x2&#x2266;1, 0&#x2266;y2&#x2266;1, y2&#x2260;y1), and the electron affinity Eof the first semiconductor crystal layer is lower than the electron affinity Eof the second semiconductor crystal layer.

Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer

Growing community of inventors

Tsukuba, Japan

Yuji Urabe