Tdk Corporation

Yuji Umeda

Akira Sato

Kumiko Yamazaki

Kenichi Suzuki

Ryuji Hashimoto

Yuki Nagamine

Junichi Yamazaki

Yoshinori Fujikawa

Masakazu Hirose

Yuiko Hirose

Hiroki Katoh

Satoko Ueda

Keiji Takeda

Hiroshi Chihara

Takeshi Shibahara

Norio Sasaki

Masaru Abe

Fan Zhang

Tamotsu Sasaki

Shogo Kadota

Tatsuya Terui

A piezoelectric composition containing: a complex oxide having a perovskite structure represented by a general formula of ABO; copper; and one or more elements selected from the group consisting of chromium, nickel and zinc, in which in ABO, an A-site element is potassium and a B-site element is niobium, or niobium and tantalum, with respect to 1 mol of the complex oxide, a content ratio of the copper is &#x3b1; mol % in terms of CuO, a content ratio of one or more elements selected from the group consisting of chromium, nickel and zinc is &#x3b2; mol % in terms of CrO, NiO, ZnO, &#x3b1; satisfies a relationship of 0.2&#x2264;&#x3b1;&#x2264;2.5, and &#x3b2; satisfies a relationship of 0.2&#x2264;&#x3b2;&#x2264;2.0.

Piezoelectric composition and piezoelectric element

A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula ABONwherein &#x3b1; is larger than zero and 0.300 or less, x+&#x3b1; is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.

Metal oxynitride thin film, process for producing metal oxynitride thin film, and capacitor element

A polycrystalline dielectric thin film and a capacitor element have a large relative dielectric constant. The polycrystalline dielectric thin film has a perovskite oxynitride as a principal component. The perovskite oxynitride is represented by compositional formula ABON(a1+b1+o+n=5), and the a-axis length of the crystal lattice of the perovskite oxynitride is larger than a theoretical value.

Polycrystalline dielectric thin film and capacitor element

To provide a permanent magnet which uses Ce of an abundant resource and has a great magnetic anisotropy in rare earth permanent magnets. To obtain a permanent magnet having a high magnetic anisotropy due to the trivalent Ce state by setting the abundance ratio C3/(C3+C4) in the main phase grains to be 0.1&#x2264;C3/(C3+C4)&#x2264;0.5 where C3 denotes the number of trivalent Ce atoms and C4 denotes the number of tetravalent Ce atoms.

Rare-earth permanent magnet

A polycrystalline dielectric thin film including a main component made of an oxynitride expressed by a general formula of (M(1)M(2))(M(3)M(4))(ON). 0&#x2264;x&#x2264;1, 0&#x2264;y&#x2264;1, and 0&#x3c;z&#x3c;&#x2153; are satisfied. A total sum of nominal valences of M(1), M(2), M(3), and M(4) is 14. A crystal structure of the oxynitride includes an octahedron structure including a center atom, two 4site atoms, and four 8site atoms. The center atom is M(3) or M(4). The 4site atom is O atom or N atom. The 8site atom is O atom or N atom. An angle &#x3b8; formed between a straight line connecting two 4site atoms and a c-axis direction of the crystal structure in the octahedron structure satisfies 0.5&#xb0;&#x2264;&#x3b8;&#x2264;12&#xb0;.

Polycrystalline dielectric thin film and capacitance element

A R-T-B based permanent magnet which not only has equivalent magnetic properties as the existing Nd&#x2014;Fe&#x2014;B based permanent magnet as well as light mass but also can be suitably used as a magnet for field system of a permanent magnet synchronous rotating machine. The magnet can be obtained in a case where the composition of the compound for forming the main phase is (R(YLa))TB (R is rare earth element(s) consisting of one or more elements of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, T is one or more transition metal elements with Fe or Fe and Co as essential elements, 0.0&#x3c;x&#x2264;0.5 and 0.0&#x3c;z&#x2264;0.5), by making the abundance ratio of Y/(Y+Y) satisfies 0.8&#x2264;Y/(Y+Y)&#x2264;1.0 when the Y occupying the 4f site of the tetragonal RTB structure is denoted as Yand the Y occupying the 4g site is denoted as Y.

R-T-B based permanent magnet

The dielectric ceramic composition comprising a main component including a compound satisfying a compositional formula of (SrBa)TiO('x' in said compositional formula is 0.159&#x2266;'x'&#x2266;0.238, and &#x201c;m&#x201d; is 0.997&#x2266;&#x201c;m&#x201d;&#x2266;1.011), and a subcomponent comprising 11 to 25 weight % of CaTiO, 0.10 to 0.50 weight % of at least one oxide of element selected from the group consisting of Fe, Co, Ni, Cu, and Zn in terms of FeO, CoO, NiO, CuO, and ZnO, 0.590 to 1.940 mol % of an oxide of element &#x201c;A&#x201d; (A is Mn and/or Cr), and an oxide of element &#x201c;D&#x201d; where &#x201c;D&#x201d; is at least one element selected from a group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Y; wherein a ratio (A/D) of the element &#x201c;A&#x201d; with respect to element &#x201c;D&#x201d; is 2.250 to 7.450. According to the present invention, the dielectric loss (tan &#x3b4;) at the wide frequency range can be lowered while maintaining a good capacitance temperature characteristic and the specific permittivity, without including Pb and bismuth Bi.

Dielectric ceramic composition and electronic component

A dielectric ceramic composition of the invention comprises a main component expressed in a compositional formula of (BaCaSr)(TiZr)O, a first subcomponent of at least one compound selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y, a second subcomponent of at least one compound selected from Si and Ag.

Dielectric ceramic composition and an electronic component

A multilayer ceramic capacitorhaving dielectric layershaving barium titanate or barium calcium titanate as a main ingredient. When the dielectric layers are barium titanate, the ratio of the grains having a thickness of the crystal grain boundariespresent between adjoining dielectric grainsis 30% to 95% of the plurality of dielectric grainsforming the dielectric layers. When the dielectric layersare barium calcium titanate, the ratio of the grains having a thickness of the crystal grain boundariespresent between adjoining dielectric grainsis 20% to 70% of the plurality of dielectric grainsforming the dielectric layers

Electronic device

A production method of a dielectric ceramic composition having a step of firing dielectric material including a main component ingredient and a subcomponent ingredient, wherein said main component ingredient before firing is barium titanate ingredient powder having the perovskite type crystal structure expressed by ABO, and a ingredient powder having a ratio A/B of A site components and B site components of 1.006&#x2266;A/B&#x2266;1.035 and the specific surface area of 8 to 50 m/g is used. According to the invention, a dielectric ceramic composition having preferable electric characteristics and temperature characteristic can be provided even in the case of being composed of fine particle and a capacitor made to be a thin layer.

Electronic device, dielectric ceramic composition and the production method

A multilayer ceramic capacitor having internal electrode layers and dielectric layers, wherein a thickness of said dielectric layer is 2.0 &#x3bc;m or less, and an average particle number per one dielectric layer obtained by dividing the thickness of said dielectric layer by an average particle diameter of dielectric particles composing said dielectric layer is 3 or more and 6 or less.

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Tokyo, Japan

Yuji Umeda