Sony Semiconductor Solutions Corporation

Yuji Uesugi

Fumihiko Koga

Keisuke Hatano

Tetsuji Yamaguchi

Ryosuke Nakamura

Toshihiko Hayashi

Katsunori Hiramatsu

Takayoshi Honda

Provided is a light detecting device, including a first electrode and a third electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode and the third electrode, a second electrode formed on the photoelectric conversion layer, and an insulation film is disposed between the third electrode and the photoelectric conversion layer. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges.

Solid-state imaging device, and electronic apparatus

Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel of a first pixel and a second pixel of a second pixel. The first and second pixels each have a first electrode, a portion of a photoelectric conversion film, and a portion of a second electrode, where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode of the first pixel has a first area, while the first electrode of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film. Alternatively or in addition, the first pixel can be divided into first and second portions.

Solid-state imaging device and electronic apparatus

Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which can contribute to control of discharge of charges or assist for transfer of charges. The detection results corresponds to one of light or temperature and the voltage of third electrode is controlled according to an output of a frame image obtained before exposure.

The present technology relates to a solid-state imaging device and an electronic apparatus which make it possible to improve pixel property. Provided is a solid-state imaging device, including a first electrode formed on a semiconductor layer, a photoelectric conversion layer formed on the first electrode, a second electrode formed on the photoelectric conversion layer, and a third electrode disposed between the first electrode and an adjacent first electrode, and electrically insulated. A voltage of the third electrode is controlled to a voltage corresponding to a detection result which contributes to control of discharge of charges or assist for transfer of charges. The present technology can be applied to, for example, a CMOS image sensor.

Solid-state imaging device and electronic apparatus with enhanced conversion efficiency

The present technology relates to a semiconductor device, a solid-state imaging device, an electronic apparatus, and a manufacturing method of the semiconductor device which can suppress generation of residual carriers within an organic film. The semiconductor device includes: a first electrode; a second electrode; and an organic film that is disposed between the first electrode and the second electrode. At least one of the first electrode and the second electrode is discontinuous. The organic film includes an inter-electrode region, which is a region interposed between the first electrode and the second electrode, and a non-inter-electrode region, which is a region not interposed between the first electrode and the second electrode, and the non-inter-electrode region is disposed between the adjacent inter-electrode regions. A suppression region, which is a region in which at least one of generation and movement of a carrier is suppressed, is present within the non-inter-electrode region.

Semiconductor device, solid-state imaging device, electronic apparatus, and manufacturing method of semiconductor device

Imaging devices and electronic apparatuses incorporating imaging devices are provided. An imaging device as disclosed can include a first pixel (PA,PB) and a second pixel (X). The first and second pixels each have a first electrode (A,B,C), a portion of a photoelectric conversion film (), and a portion of a second electrode (), where the photoelectric conversion film is between the first electrode and the second electrode. The first electrode (A,B) of the first pixel has a first area, while the first electrode (C) of the second pixel has a second area that is smaller than the first area. The first pixel can include a light shielding film (A,B). Alternatively or in addition, the first pixel can be divided into first and second portions.

Growing community of inventors

Kanagawa, Japan

Yuji Uesugi