Fujitsu Corporation

Yuji Uchiyama

Toshiya Suzuki

Takae Sukegawa

Atsuhiro Tsukune

The method of forming a capacitor of a semiconductor device comprises the steps of forming a semiconductor film connected to a semiconductor substrate, forming a capacitor lower electrode made of a tungsten film selectively on a surface of the semiconductor film by causing a tungsten compound gas to react with the semiconductor film, forming a tungsten nitride film by nitriding a surface of the tungsten film by using a nitrogen gas or a nitrogen containing gas, forming a capacitor dielectric film made of oxygen compound on the tungsten nitride film, annealing the capacitor dielectric film in an oxygen containing gas, and forming a capacitor upper electrode made of a conductive film on the capacitor dielectric film.

Growing community of inventors

Kanagawa, Japan

Yuji Uchiyama