Hitachi-Kokusai Electric Inc.

Kokusai Electric Corporation

Kokusai Electric Co., Ltd.

Yuji Takebayashi

Hirohisa Yamazaki

Tsutomu Kato

Satoshi Okada

Masanori Sakai

Kenichi Suzaki

Kosuke Takagi

Tetsuo Yamamoto

Tatsuyuki Saito

Atsushi Hirano

Shinya Sasaki

Toshiki Fujino

Kazuki Nonomura

Arito Ogawa

Hiroshi Ashihara

Yusaku Okajima

Hideharu Itatani

Sadayoshi Horii

Yukinao Kaga

Masakazu Shimada

Shintaro Kogura

Toshiro Koshimaki

Noriyuki Isobe

Yuma Fujii

Yoshinori Baba

Eisuke Nishitani

Kazuyuki Okuda

Masayoshi Minami

Yoshinobu Nakamura

Tokunobu Akao

Takashi Nakagawa

Unryu Ogawa

Katsuhiko Yamamoto

Makoto Hirano

Hironobu Miya

Masahisa Okuno

Takeshi Kasai

Hiroki Hatta

Atsuhiko Ashitani

Koji Shibata

Minoru Inoue

Gen Li

Atsushi Morikawa

Koichi Oikawa

Ryuichi Nakagawa

Toshinori Shibata

Yoshikazu Konno

Naoko Tsunoda

Yukihito Hada

Shota Tanaka

An amount of particles generated when a source material is used is suppressed. A substrate is loaded into a process chamber, and the source material is sequentially flowed into an evaporator, and a mist filter constituted by assembling a plurality of at least two types of plates including holes disposed at different positions to be evaporated and supplied into the process chamber to process the substrate, and then, the substrate is unloaded from the process chamber.

Method of manufacturing semiconductor device, substrate processing apparatus and evaporation system

There is provided a technique that includes: at least one process chamber configured to be capable of processing a substrate; one or more supports configured to be capable of supporting the substrate; a transporter configured to be capable of transporting the one or more supports; a transfer chamber configured to be capable of transferring the substrate; a transport chamber that is adjacent to the transfer chamber and the at least one process chamber and is configured to be capable of moving the transporter; and a delivery chamber that is disposed in the transport chamber and is configured to be capable of delivering the one or more supports.

Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium

There is provided a technique capable of improving a step coverage performance of a film formed on a substrate. According to one aspect thereof, there is provided a substrate processing method including: (a1) supplying a first process gas such that a transfer velocity of the first process gas toward an edge region of a substrate is faster than the transfer velocity of the first process gas toward a central region of the substrate; (a2) supplying a second process gas such that a transfer velocity of the second process gas toward the central region of the substrate is faster than the transfer velocity of the second process gas toward the edge region of the substrate; and (b) supplying a reactive gas toward the substrate.

Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

There is provided a technique that includes: at least one process chamber in which at least one substrate is processed; a mounting stage configured to be capable of mounting the at least one substrate on the mounting stage; a transport chamber including a conveyor configured to be capable of holding the mounting stage at least two places in a vertical direction and transporting the mounting stage; and a controller configured to be capable of performing a transport control of the conveyor in the transport chamber.

Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and recording medium

According to one aspect of the present disclosure, there is provided a technique including: (a) stacking and accommodating substrates in a process chamber; (b) supplying a source gas to the plurality of substrates through a first nozzle provided in the process chamber along a stacking direction of the plurality of substrates and a second nozzle provided in the process chamber along the stacking direction of the plurality of substrates, wherein an amount of the source gas supplied through an upper portion of the first nozzle is greater than that of the source gas supplied through a lower portion of the first nozzle, and an amount of the source gas supplied through the lower portion of the second nozzle is greater than that of the source gas supplied through the upper portion of the second nozzle; and (c) supplying a reactive gas to the substrates.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

There is provided a technique that includes: (a) supplying a chlorine-containing gas to an interior of a process vessel, to which an oxide film adheres, under a first pressure; (b) exhausting the interior of the process vessel; (c) supplying an oxygen-containing gas into the process vessel; (d) exhausting the interior of the process vessel; (e) supplying the chlorine-containing gas into the process vessel under a second pressure lower than the first pressure; (f) exhausting the interior of the process vessel; (g) supplying the oxygen-containing gas into the process vessel; and (h) exhausting the interior of the process vessel, wherein the oxide film which adheres to the interior of the process vessel is removed by performing each of (a) to (h) one or more times and setting a supply amount of the oxygen-containing gas in (c) different from a supply amount of the oxygen-containing gas in (g).

Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatus

A technique for improving uniformity of film thickness on substrates, includes a substrate processing apparatus having a substrate retainer including substrate and partition plate supports; a reaction tube; a first driver vertically moving the substrate retainer into or out of the reaction tube; a second driver vertically moved by the first driver and rotating the substrate retainer to change a distance between a substrate and a partition plate by moving at least one of the substrate or the partition plate support; a heater; a gas supplier comprising a nozzle; a gas exhauster; and a controller controlling the first driver, the second driver and the gas supplier such that a gas is supplied to the substrate while changing at least one of a relative position of the substrate and a relative position of the partition plate with respect to a hole of the nozzle by driving the second driver.

Substrate processing apparatus, elevator and method of manufacturing semiconductor device

Described herein is a technique capable of suppressing or preventing an inside of a source gas nozzle from being heated to a substrate processing temperature when a source gas is supplied through the source gas nozzle into a reaction tube in which a substrate is accommodated. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube made of a first material and capable of accommodating a substrate; and a source gas nozzle provided in the reaction tube and at least a part thereof made of a second material whose reflectance is higher than that of the first material and whose surface is rougher than that of the first material by bubbles contained therein, wherein a source gas is supplied through the source gas nozzle.

Substrate processing apparatus, gas nozzle and method of manufacturing semiconductor device

Described herein is a technique capable of suppressing deposits. According to one aspect of the technique, there is provided a method including: (a) supplying a source gas into a process chamber through a source gas nozzle while heating the process chamber; and (b) supplying a reactive gas into the process chamber, wherein (a) and (b) are alternately performed one by one to form a film on the plurality of the substrates while satisfying conditions including: (i) a supply time of the source gas in (a) in each cycle is 20 seconds or less; (ii) a pressure of the source gas in the source gas nozzle in (a) is 50 Pa or less; (iii) an inner temperature of the process chamber in (a) is 500&#xb0; C. or less; and (iv) number of cycles performed continuously to form the film on the plurality of the substrates is 100 cycles or less.

Method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

A substrate processing apparatus, includes: a substrate holder including at least one support column to which a mounting part on which a substrate is mounted is attached and at least one auxiliary support column to which the mounting part is not attached, wherein the substrate holder is configured such that a diameter of the auxiliary support column is smaller than a diameter of the support column, and wherein the substrate holder is configured such that when the substrate is held by the mounting part, an end portion of the substrate and each of the support column is spaced apart from each other by a predetermined length.

Substrate processing apparatus, substrate holder and mounting tool

A substrate processing apparatus includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process, while heating the process chamber accommodating the plurality of substrates to the predetermined temperature. The process includes supplying the precursor gas from the precursor gas nozzle to the process chamber and supplying the reaction gas to the process chamber.

Substrate processing apparatus and precursor gas nozzle

A method of manufacturing a semiconductor device, includes: supplying precursor gas into process chamber in which plural substrates are accommodated by sequentially performing: supplying inert gas at first inert gas flow rate from first nozzle into the process chamber; supplying the inert gas at second inert gas flow rate higher than the first inert gas flow rate from the first nozzle into the process chamber while supplying precursor gas from the first nozzle into the process chamber; and supplying the inert gas at the first inert gas flow rate from the first nozzle into the process chamber while the process chamber is evacuated from an upstream side of flow of the precursor gas; stopping supply of the precursor gas; removing the precursor gas remaining in the process chamber; supplying reaction gas from a second nozzle into the process chamber; and removing the reaction gas remaining in the process chamber.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Gas supply nozzle

Growing community of inventors

Toyama, Japan

Yuji Takebayashi