Hitachi, Ltd.

Yuji Suwa

Tomihiro Hashizume

Takeo Shiba

Masaaki Fujimori

Satoshi Watanabe

Masahiko Ando

Yasuo Wada

Tadashi Arai

Masahiko Ichimura

Yoshimasa A Ono

Toshiyuki Onogi

Masahiro Kawasaki

Makoto Takahashi

Hiromasa Takahashi

Shinichi Saito

Jun Hayakawa

Yoshifumi Sekiguchi

Kenzo Kurotsuchi

Ryuta Tsuchiya

Shunsuke Mori

Mitsuharu Tai

Ken Yamaguchi

Seiichi Suzuki

David Arfon Williams

Kohhei Aida

Shirun Ho

Norifumi Kameshiro

Yosuke Kurosaki

Etsuko Nomoto

Akinori Nishide

Sanato Nagata

Shin Yabuuchi

Shigetaka Tsubouchi

Aleksey Andreev

A calculation device comprises a color evaluation unit that acquires a sensor color and four or more reference colors from photography data from a measurement time when an indication object was photographed in a second photography environment; determines coefficients for color conversion between a first and the second photography environments based on the amount of change from color information for the reference colors in the first photography environment, which has been read from a calculation device storage unit, to color information for the reference colors in the second photography environment, which has been acquired from the photography data; and uses the sensor color acquired from the photography data from the measurement time and the color conversion coefficients to correct the sensor color to the color that would have been photographed in the first photography environment by solving a conversion formula including terms representing an affine transformation consisting of translation.

Color evaluation device, color evaluation method, and indication object used in color evaluation method

An object of the present invention is to provide an artificial olfactory sensing system capable of sniffing out various odors highly sensitively. The artificial olfactory sensing system includes: plural sensor cells on a lipid membrane of each of which olfactory receptors have developed; and plural ion-sensitive field-effect transistors (ISFETs) that correspondingly exist to the sensor cells on a one-on-one basis. A response signal showing that each of the olfactory receptors of each of the sensor cells has recognized an odor molecule is converted into an electric signal by an ISFET corresponding to each of the sensor cells.

Artificial olfactory sensing system

In order to provide a thermoelectric conversion element which has a high Seebeck coefficient, a low thermal conductivity, and a high performance, even if the material system that has a low environmental load and can reduce the cost is used, the thermoelectric conversion element in which lattice points are classified into two or more kinds (A site and B site), lattices of which the kinds are different are connected to each other, the numbers of lattices of which the kinds are different are different (A site: 2, and B site: 1), and a lattice structure is configured by arranging nanoparticles or semiconductor quantum dots, includes areas of which conductivity types are different.

Thermoelectric conversion element and thermoelectric conversion module

A silicon-based quantum dot device () is disclosed. The device comprises a substrate () and a layer () of silicon or silicon-germanium supported on the substrate which is configured to provide at least one quantum dot (: FIG.). The layer of silicon or silicon-germanium has a thickness of no more than ten monolayers. The layer of silicon or silicon-germanium may have a thickness of no more than eight or five monolayers.

Silicon-based quantum dot device

Provided is an element structure whereby it is possible to produce a silicon-germanium light-emitting element enclosing an injected carrier within a light-emitting region. Also provided is a method of manufacturing the structure. Between the light-emitting region and an electrode there is produced a narrow passage for the carrier, specifically, a one-dimensional or two-dimensional quantum confinement region. A band gap opens up in this section due to the quantum confinement, thereby forming an energy barrier for both electrons and positive holes, and affording an effect analogous to a double hetero structure in an ordinary Group III-V semiconductor laser. Because no chemical elements other than those used in ordinary silicon processes are employed, the element can be manufactured inexpensively, simply by controlling the shape of the element.

Silicon-germanium light-emitting element

A method of manufacturing a thin-film transistor device improves performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device, and reduces power consumption manufacturing cost. Electrodes forming n-type and p-type TFTs and an organic semiconductor are made of the same material in both types of TFT by a solution-process and/or printable process method. A first polarizable thin-film is formed on an interface between a gate insulator and a semiconductor, and a second polarizable thin film provided on an interface between source and drain electrodes and the semiconductor film. A complementary thin-film transistor device is manufactured by selectively exposing either the n-type TFT area or the p-type TFT area to light to remove the polarizing function from the first and second polarizable thin films.

Thin-film transistor device and a method for manufacturing the same

An n-type TFT and a p-type TFT are realized by selectively changing only a cover coat without changing a TFT material using an equation for applying the magnitude of a difference in the Fermi energy between an interface of semiconductor and an electrode and between an interface of semiconductor and insulator. At this time, in order to configure a predetermined circuit, the process is performed, as a source electrode and a drain electrode of the p-type TFT and a source electrode and a drain electrode of the n-type TFT being connected all, respectively, and an unnecessary interconnection is cut by irradiating light using a scanning laser exposure apparatus or the like.

Organic thin film transistor array and method of manufacturing the same

An organic transistor is formed with a low material cost and low manufacturing cost while still providing high performance and a low contact resistance with an organic semiconductor of the transistor. The organic transistor has electrodes whose bodies are formed mainly of an inexpensive first metal and whose surfaces are formed of a second metal that is expensive but provides high performance properties. To obtain stability of this structure with a low cost, a property of the second metal is used in which the second metal is easily segregated on the surface of the first metal in an alloy of the first metal and the second metal.

Wiring and organic transistor, and manufacturing method thereof

Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.

Organic transistor using self-assembled monolayer

A method for producing a semiconductor device which comprises causing a dopant present in a semiconductor substrate to segregate in the surface of said semiconductor substrate, thereby forming a thin layer which has a higher dopant concentration than said substrate. The thin layer formed by segregation prevents punch-through which occurs as the result of miniaturization of MOSFET. This method permits economical delta doping without sacrificing the device characteristics.

Semiconductor device and its production method

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom ( ), a second atom ( ) of the same kind as the first atom ( ), and a third atom (or atomic group) ( ) of the same kind as the first atom ( ) or of a kind different from that of the first atom ( ). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond ( ) is formed between the first atom or molecule and the third atom or molecule, a chemical bond ( ) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path ( ) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

Ferromagnetic material and magnetic apparatus employing the ferromagnetic material

A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (,), a second atom (,) of the same kind as the first atom (,), and a third atom (or atomic group) (,) of the same kind as the first atom (,) or of a kind different from that of the first atom (,). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (,) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (,) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (,) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.

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Kokubunji, Japan

Yuji Suwa