Mitsubishi Electric Corporation

Yuji Shikasho

Keitaro Ichikawa

Fumihito Kawahara

Taketoshi Shikano

Provided are a power semiconductor device using a lead frame, in which deformation and bending of terminals is suppressed, insulation is secured between terminals, and mounting onto a control board is facilitated, and a manufacturing method thereof. A package in which a semiconductor element mounted on a lead frame is sealed, terminals being bent and exposed from side surfaces of the package, and, a terminal bending portion being a portion bent in each of the terminals, a width thereof being larger than a width of a tip of the terminal, and being equal to or smaller than the width of a contact portion of the terminal in contact with the package are provided; therefore, deformation and bending of the terminals is suppressed, a necessary insulation is secured between the adjacent terminals, and mounting onto a control board is facilitated.

Power semiconductor device and manufacturing method thereof

A transfer-mold type power module includes a plurality of electrode terminals that is arranged so as to protrude in the same direction from a target side surface of a package. A tie bar cutting residue protruding from a first side surface of each of the electrode terminals and a tie bar cutting residue protruding from a second side surface of each of the electrode terminals are different in position in a length direction of each of the electrode terminals. Each of the electrode terminals has a shape bent at a position including tie bar cutting residue closer to the package, with a width direction of each of the electrode terminals as an axis.

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Tokyo, Japan

Yuji Shikasho