Mitsubishi Electric Corporation

Kao Corporation

The United States of America, as Represented by the Secretary, Department of Health and Human Services

Takeda Chemical Industries, Inc.

Teijin Limited

Nippon Iron Powder Co. Ltd.

Mitsubishi Jidosha Kogyo K.k.

Hitachi Mitsubishi Hydro Corporation

Yuji Sato

Yosuke Nakata

Yoshinori Yokoyama

Motoru Yoshida

Koji Tanaka

Jun Fujita

Kazuyuki Sugahara

Shinichiro Yasuda

Atsushi Imaizumi

Mitsuhiro Yuasa

Yoshihiro Fukushima

Junichi Fukasawa

Iwao Yoshida

Masayoshi Nawa

Yutaka Yasuda

Akihiro Tsuchiya

Toshio Honjo

Yoshihisa Uchida

Jun Shida

Kensuke Kondo

Shotaro Nakamura

Hiroko Sato

Henry G Friesen

Hidetsugu Shimizu

According to the present disclosure, a semiconductor device includes a semiconductor substrate, a first metal layer provided above the semiconductor substrate, a second metal layer provided above the first metal layer and containing Ni as a material and a third metal layer provided above the second metal layer and containing Cu or Ni as a material, wherein the second metal layer has a Vickers hardness of 400 Hv or more and is harder than the third metal layer, and the third metal layer is harder than the first metal layer.

Semiconductor device and method for manufacturing semiconductor device

Provided is a semiconductor device capable of suppressing an Al slide at a time of an operation under a high temperature in a laminated structure of an aluminum electrode layer and a copper electrode layer. Accordingly, in the semiconductor device according to the present disclosure, a first copper electrode layer includes a plurality of protruding regions as regions protruding toward the aluminum electrode layer in an interface with the aluminum electrode layer.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor chip including a main electrode and a control electrode is bonded to a substrate. A wiring chip including a first electrode, a second electrode and a wiring is bonded to the substrate. A main electrode member is bonded to the main electrode. A control electrode member is bonded to the second electrode. The control electrode is bonded to the first electrode with a connection member. The semiconductor chip, the substrate, the wiring chip, the main electrode member, the control electrode member and the connection member are putted into a mold and are sealed with sealing material by injecting the sealing material into the mold in a state that distal end surfaces of the main electrode member and the control electrode member are pressed against a buffer material provided between the main electrode member/the control electrode member and the mold. The sealing material is not ground.

Manufacturing method of semiconductor device

A semiconductor apparatus includes: a first conductor plate; a second conductor plate separated from the first conductor plate; a plurality of semiconductor devices having back surface electrodes connected to the first conductor plate; a relay substrate mounted on the second conductor plate and including a plurality of first relay pads and a second relay pad connected to the plurality of first relay pads; a plurality of metal wires respectively connecting control electrodes of the plurality of semiconductor devices to the plurality of first relay pads; a first conductor block connected to front surface electrodes of the plurality of semiconductor devices; a second conductor block connected to the second relay pad; and a sealing material sealing the first and second conductor plates, the plurality of semiconductor devices, the relay substrate, the metal wire, and the first and second conductor blocks, the sealing material includes a first principal surface and a second principal surface opposed to each other, the first conductor plate is exposed from the first principal surface, the second conductor plate is not exposed from the first principal surface, and the first and second conductor blocks are exposed from the second principal surface.

Semiconductor apparatus, power module, and manufacturing method of semiconductor apparatus

A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Semiconductor device, power conversion device, and method for manufacturing semiconductor device

A Bordetella pertussis variant which produces a pertussis toxin mutant protein partially devoid of subunits. When the variants of the present invention are cultured, a pertussis toxin mutant protein partially devoid of subunits, particularly at least subunit S1, can be harvested from the culture. The thus-obtained pertussis toxin mutant protein partially devoid of subunits can be applied to the preparation of a pertussis vaccine by a conventional method.

Bordetella pertussis variants

A sandwich method, in which heparin coupled to a carrier, a sample and an antibody labeled with a labeling agent, brings about a high sensitivity for detecting and/or measuring FGF.

Method for detecting and measuring FGF

A developer for electrostatic photography comprises toner and carrier coated with a composition comprising a silicone resin having (II) and (II') and at least one compound represented by following formula (III), (IV) or (V): ##STR1##

Developer for electrostatic image comprising coated carrier

A cosmetic agent serves to form film being durable to various effects and comprises a copolymer of a fluoroalkyl (meth)acrylate and a long chain, linear alkyl (meth)acrylate. It may further comprise a volatile oil and solid fat(s).

Cosmetic comprising fluoroalkyl (meth)acrylate copolymers

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Tokyo, Japan

Yuji Sato