Fuji Electric Holdings Co., Ltd.

Yuji Sano

Akihiko Ohi

Yoshihiko Nagayasu

Daisuke Kishimoto

Hitoshi Kuribayashi

In the method for manufacturing a semiconductor device according to the invention including the step of forming trenches having the depth thereof in perpendicular to the major surface of a semiconductor substrate, the step of forming trenches includes the steps of performing trench etching using an insulator film, formed on the major surface of the semiconductor substrate and shaped with a predetermined pattern, for a mask to form the trenches; etching the inside of the trenches using a halogen containing gas to smoothen the inside of the trenches; and thermally treating in a non-oxidizing and non-nitriding atmosphere. The manufacturing method according to the invention facilitates well removing the etching residues remaining in the trenches and rounding the trench corners properly when the trenches are 2 &#x3bc;m or narrower in width and even when the trenches are 1 &#x3bc;m or narrower in width.

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Nagano, Japan

Yuji Sano