Nitto-denko Corporation

Yuji Okawa

Takeshi Matsumura

Masayuki Yamamoto

Koichi Hashimoto

Fumiteru Asai

Takayuki Yamamoto

Yasuo Kihara

Tomokazu Takahashi

Chiaki Harada

Toshio Shintani

Tatsuya Kubozono

Tatsuya Sekido

Provided is a masking pressure-sensitive adhesive tape to be used in formation of a metal layer by a vacuum film formation method on part of a surface of an electronic part, which may prevent formation of a metal layer, by the vacuum film formation method, on a surface masked by the masking pressure-sensitive adhesive tape. The masking pressure-sensitive adhesive tape includes: a base material; and a pressure-sensitive adhesive layer arranged on one side of the base material, in which the pressure-sensitive adhesive layer has a thickness of 5 &#x3bc;m or more, and the masking pressure-sensitive adhesive tape has a 180&#xb0; peeling adhesive strength at 23&#xb0; C. with respect to a stainless-steel plate of 0.4 N/20 mm or more.

Masking pressure-sensitive adhesive tape

An adhesive sheet for laser dicing is used for dicing a workpiece into individual chips by light absorption ablation of laser beam and has at least an adhesive layer on one side of a base material which has a surface opposite to the adhesive layer having no convex parts of width (W) of 20 mm or less and height (h) of 1 &#x3bc;m or more, or no concave parts of width (W) of 20 mm or less and depth (d) of 1 &#x3bc;m or more.

Adhesive sheet for laser dicing and its manufacturing method

Provided is a treatment method of a semiconductor wafer facilitating picking-up of semiconductor chips and preventing contamination by a dicing sheet. A wafer back surface treating method is characterized in that a ground or polished surface of a semiconductor wafer activated in a grinding or polishing step, with semiconductor circuits formed thereon, is deactivated. In the method, the activation treatment with an oxidizing agent is preferable. Furthermore, the activation treatment is preferably implemented with blowing of ozone to a ground or polished surface of a wafer, with ozone water or with illumination of a ground or polished surface of a wafer with ultraviolet (UV). It is preferable to adhere a dicing sheet after the deactivation treatment.

Wafer back surface treating method and dicing sheet adhering apparatus

An ultraviolet irradiating apparatus for emitting ultraviolet light toward a work piece. The work piece, e.g. a semiconductor wafer, is held by a ring-shaped frame through an ultraviolet sensitive adhesive tape applied to the back surface of the wafer. The apparatus includes an ultraviolet irradiating section having a regulating member disposed in a lower position of a support base. The regulating member is provided to limit a downward displacement of the wafer.

Ultraviolet irradiating method and an apparatus using the same

Method for resist removal, and adhesive or adhesive sheet for use in the

A method for producing a semiconductor element, comprising treating a lead frame or a semiconductor wafer or a semiconductor chip, or a lead frame and a semiconductor chip in combination, with at least one package crack-preventing compound selected from compounds having a reactive group, acids, derivatives at a group due to which said acid assumes acidity, siloxane derivatives of the formula (I) ##STR1## and compounds having a number average molecular weight of not more than 10,000 and comprising, in their structure, said siloxane derivative; and an adhesive for adhering a wafer, which is usable in said production method. According to the method, package cracks can be significantly prevented.

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Ibaraki, Japan

Yuji Okawa