Rohm Co., Ltd.

Yuji Okamura

Masashi Matsushita

Takashi Nakamura

Tatsuya Kiriyama

Shingo Ohta

Koichi Kudo

Yasuo Aki

A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten.

Semiconductor device and method of manufacturing the same

A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed.

Schottky barrier diode and method for making the same

Semiconductor device with a silicon carbide substrate and ohmic metal layer

A method for producing a semiconductor device, is composed of steps of: covering a lower side of a semiconductor wafer with a heavy metal and disposing the semiconductor wafer in a chamber; causing the heavy metal to diffuse into the semiconductor wafer by heating the semiconductor wafer with a heat source having a small thermal capacity; and thereafter, ceasing to heat with the heat source, then charging the chamber with a cooling gas.

Method for producing semiconductor device

Growing community of inventors

Kyoto, Japan

Yuji Okamura