Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Mirise Technologies Corporation

Disco Corporation

Yuji Nagumo

Teruaki Kumazawa

Masashi Uecha

Hiroki Tsuma

Kazuya Hirata

Masatake Nagaya

Asahi Nomoto

Fumihito Tachibana

In a manufacturing method of a semiconductor device, a wafer in which multiple semiconductor elements is formed and having a first surface and a second surface opposite to each other is prepared, and a groove is formed on the first surface of the wafer along a boundary between adjacent semiconductor elements in the multiple semiconductor elements. The wafer is attached to a support plate in such a manner that the first surface of the wafer faces the support plate, and a scribing blade is pressed against the second surface of the wafer along the boundary to form a vertical crack inside the wafer along the boundary. Then, a breaking blade is pressed against the wafer along the boundary to cleave the wafer along the boundary.

Method of forming grooves and vertical cracks in a wafer comprising individual semiconductor elements to separate the semiconductor elements by cleaving the wafer along the grooves and the vertical cracks

In a manufacturing method of a semiconductor device, a semiconductor wafer that is made of a semiconductor material harder than silicon and has a first surface and a second surface opposite to each other is prepared, a roughened layer is formed by grinding the second surface of the semiconductor wafer, a blade is pressed against the roughened layer to form a vertical crack in a surface layer of the semiconductor wafer, the roughened layer is removed after the vertical crack is formed, a rear surface electrode is formed on a rear surface of the semiconductor wafer on which the vertical crack is formed, and after the rear surface electrode is formed, the first surface of the semiconductor wafer is pressed and the semiconductor wafer is cleaved into multiple pieces with the vertical crack as a starting point.

Manufacturing method of semiconductor device

A silicon carbide semiconductor device includes a silicon carbide semiconductor layer and a side silicide layer. The silicon carbide semiconductor layer includes a silicon carbide single crystal and has a main surface, a rear surface opposite to the main surface, and a side surface connecting the main surface and the rear surface and formed by a cleavage plane. The silicon carbide semiconductor layer further includes a modified layer. The modified layer forms a part of the side surface located close to the rear surface and has an atomic arrangement structure of silicon carbide different from an atomic arrangement structure of the silicon carbide single crystal. The side silicide layer includes a metal silicide that is a compound of a metal element and silicon. The side silicide layer is disposed on the side surface of the silicon carbide semiconductor layer and is adjacent to the modified layer.

Silicon carbide semiconductor device including a side silicide layer and method for manufacturing the same

A method of manufacturing a chip formation wafer includes: forming an epitaxial film on a first main surface of a silicon carbide wafer to provide a processed wafer having one side adjacent to the epitaxial film and the other side; irradiating a laser beam into the processed wafer from the other side of the processed wafer so as to form an altered layer along a surface direction of the processed wafer; and separating the processed wafer with the altered layer as a boundary into a chip formation wafer having the one side of the processed wafer and a recycle wafer having the other side of the processed wafer. The processed wafer has a beveling portion at an outer edge portion of the processed wafer, and an area of the other side is larger than an area of the one side in the beveling portion.

Processed wafer and method of manufacturing chip formation wafer

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Nisshin, Japan

Yuji Nagumo