Shibaura Mechatronics Corporation

Lapis Semiconductor Co., Ltd.

Yuji Nagashima

Konosuke Hayashi

Takashi Ootagaki

Masahiro Abe

Kunihiro Miyazaki

Masaaki Furuya

Atsushi Kinase

Koichi Hamada

Yuki Saito

Nobuo Kobayashi

Bunsho Kuramori

Yoshiaki Kurokawa

Hiroyuki Tanikawa

Akinori Iso

Jun Matsushita

Kenji Minami

According to one embodiment, a substrate treatment method of removing an upper end of a protrusion on a substrate is disclosed. An unevenness is formed on a surface of the substrate. The method can supply a first liquid on the surface of the substrate. The unevenness is formed on the surface. The method can form a protective layer. The protective layer covers the surface of the substrate from the first liquid supplied to the surface of the substrate. The method can supply a second liquid onto the protective layer. In addition the method can physically remove the protective layer which is on the upper end of the protrusion, and can bring the second liquid into contact with the upper end of the protrusion. The protective layer is removed from the upper end of the protrusion.

Substrate treatment method and substrate treatment apparatus

A memory controller includes: a memory access part which writes, to memory, an encrypted data acquired by encrypting information data, a first code for error detection based on the information data, and a second code for error detection based on the encrypted data and which reads the encrypted data, the first and second codes from the memory during a monitoring process being executed with a monitoring part; a decryption part for acquiring readout data by decrypting the encrypted data; and an error detection part which acquires a first error detection result by performing an error detection process on the readout data and the first code and a second error detection result by performing an error detection process on the encrypted data and the second code. The monitoring part stops the decryption part during the monitoring process and determines a deterioration level of memory based on the second error detection result.

Semiconductor storage device, memory controller, and method for monitoring memory

According to one embodiment, a substrate processing apparatus includes a processing chamber, a support part, a heater, and an optical member. In the processing chamber, air flows from the top to the bottom. The support part is located in the processing chamber to support a substrate having a surface to be treated. The heater is arranged so as not to be above the support part and emits light for heating. The optical member is arranged in the processing chamber so as not to be above the support part to guide the light emitted by the heater and having passed above the support part to the surface to be treated of the substrate supported by the support part.

Substrate processing apparatus

A substrate processing devicehas a water removing unitand, when a solvent supply unitsupplies a volatile solvent to a surface of a substrate W, the water removing unitsupplies a water removing agent to the surface of the substrate W to promote replacement of the cleaning water on the surface of the substrate W with the volatile solvent.

Substrate processing device and substrate processing method

According to one embodiment, a substrate processing apparatus () includes: a support () configured to support a substrate (W) in a plane; a rotation mechanism () configured to rotate the support () about an axis that crosses a surface of the substrate (W) supported by the support () as a rotation axis; a plurality of nozzles (), which are aligned from the center toward the periphery of the substrate (W) supported by the support (), configured to eject a treatment liquid to the surface of the substrate (W) on the support () being rotated by the rotation mechanism (), and a controller () configured to control the nozzles to eject the treatment liquid at different ejection timings according to the thickness of a film of the treatment liquid formed on the surface of the substrate (W) on the support () being rotated by the rotation mechanism ().

Substrate processing apparatus and substrate processing method

According to one embodiment, a substrate processing apparatus () includes a table () configured to support a substrate W, a solvent supply unit () configured to supply a volatile solvent to a surface of the substrate W on the table (), and an irradiator () configured to emit light to the substrate W, which has been supplied with the volatile solvent, and function as a heater that heats the substrate W such that a gas layer is formed on the surface of the substrate W to make the volatile solvent into a liquid ball. Thus, it is possible to dry the substrate successfully as well as to suppress pattern collapse.

A substrate processing device includes a suction drying section drying a surface of a substrate by absorbing and removing a liquid droplet of volatile solvent formed on the surface of the substrate by a heating operation of a heating section.

According to the embodiment, a substrate treating devicefor treating a semiconductor wafer W using an etchant L containing hydrofluoric acid and nitric acid includes a storage tankthat stores the etchant L; a concentration sensorthat measures a concentration of nitrous acid in the etchant L; an alcohol feeding linethat feeds IPA to the etchant L and maintains the concentration of nitrous acid to a predetermined value or more; and a substrate treating unitthat feeds the etchant L in the storage tankto the semiconductor wafer W. The substrate treating device can improve the etching efficiency by efficiently generating nitrous acid, and thereby producing an etchant having a nitrous acid concentration suitable for etching.

Device and method for treating a substrate with hydrofluoric and nitric acid

According to one embodiment, a substrate processing apparatus includes a first liquid supplier, a second liquid supplier, and a controller. The first liquid supplier supplies a substrate with a sulfuric acid solution having a first temperature equal to or higher than the boiling point of hydrogen peroxide water. The second liquid supplier supplies a surface to be treated of the substrate with a mixture of sulfuric acid solution and hydrogen peroxide water having a second temperature lower than the first temperature. The controller controls the first liquid supplier to supply the sulfuric acid solution so as to heat the substrate to the boiling point of hydrogen peroxide water or higher. When the temperature of the substrate becomes equal to or higher than the second temperature, the controller controls the first liquid supplier to stop supplying the sulfuric acid solution and controls the second liquid supplier to supply the mixture.

A substrate processing deviceincludes a cleaning liquid supply unitsupplying a cleaning liquid to a surface of a substrate W, a solvent supply unitsupplying a volatile solvent to the surface of the substrate W supplied with the cleaning liquid to replace the cleaning liquid on the surface of the substrate W with the volatile solvent, a heating unitheating the substrate W supplied with the volatile solvent, and a drying unitdrying the surface of the substrate W by removing a droplet of the volatile solvent produced on the surface of the substrate W by a heating operation of the heating unit, and the heating unitand the drying unitare arranged in a course of transportation of the substrate W transported from the solvent supply unit

In a substrate processing devicehaving a heating and drying unitfor drying a surface of a substrate W, the heating and drying unitheats upward a vertically downward surface of the substrate W to dry the surface of the substrate by dropping and removing, by gravity, the droplets of the volatile solvent formed on the surface of the substrate W by the heating operation.

[Problem] To provide a substrate treatment device which can more efficiently heat and more efficiently use a treatment solution to treat the surface of a plate-shaped substrate. [Solution] A substrate treatment device which is provided with a treatment solution feed mechanismand feeds a treatment solution S to the surface of a plate-shaped substrate that is held on the substrate holding partand which uses the treatment solution S to treat the surface of the plate-shaped substrate, which substrate treatment device has a treatment solution holding platewhich is arranged facing the surface of the plate-shaped substratethat is held at the substrate holding part, across a predetermined distance, and which holds the treatment solution with the surface of the plate-shaped substrateand a heating partwhich contacts a predetermined region of the treatment solution holding plate, including a position corresponding to the axis of rotation of the substrate holding part, to heat the predetermined region and which treatment solution feed mechanism feeds the treatment solution S to the clearance between the surface of the plate-shaped substratewhich rotates together with the substrate holding partand the treatment solution holding platewhich is heated by the heating part

Substrate treatment device and substrate treatment method

A nonvolatile semiconductor memory device and a method of reusing the same that allow a good use of the semiconductor device without degrading characteristics even when reused. The semiconductor memory device comprises information holding means for holding information that indicates an operation mode of said memory cell array, a decoder for generating, to said memory cell array, a selection signal to designate at least a read address of said memory cell array in accordance with an address signal that comprises plural bits; and mode setting means for fixing a logical value of at least one bit of said plural bits of said address signal in accordance with the information held by said information holding means, and supplying said address signal, on which fixing of the logical value is effected, to said decoder.

Growing community of inventors

Yokohama, Japan

Yuji Nagashima