Mitsubishi Electric Corporation

Sony Corporation

Yuji Murakami

Akihiko Furukawa

Tsuyoshi Kawakami

Atsushi Narazaki

Shoichi Orita

Hiroki Muraoka

Katsumi Nakamura

Jun Watanabe

Shunsuke Kunieda

Kohei Ebihara

Kae Nagano

Kenji Hamada

Masayoshi Miura

Ze Chen

Kensuke Ohnuma

Hideki Asazu

Fumihito Masuoka

Toshiyuki Katsumoto

Akito Nishii

Takehisa Souraku

Hiroyuki Yoshizu

In the present application, a power semiconductor device includes a first-conductive-type first base region having a first principal surface and a second principal surface opposite to the first principal surface, a second-conductive-type second base region disposed on the first principal surface and at least three groove parts parallel to each other disposed from a surface of the second base region. The device further includes insulating films covering inner walls of the respective groove parts, conductive trench gates filled on the insulating films, a first-conductive-type emitter region disposed in the second base region, and a second-conductive-type collector region disposed on the second principal surface of the first base region. The trench gates embedded in the first groove part and the third groove part are electrically connected to the gate electrode, and the trench gate embedded in the second groove part is electrically connected to the emitter electrode.

Power semiconductor device

A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region.

Semiconductor device having a plurality of electric field relaxation layers and method for manufacturing same

An electric field buffer layer is formed so as to surround an active region. The electric field buffer layer includes a plurality of P-type impurity layers. Each of the P-type impurity layers includes P-type implantation layers and P-type diffusion layers that are formed so as to respectively surround the P-type implantation layers and contain P-type impurities at a concentration lower than that of the P-type implantation layers. A first P-type implantation layer is formed to be in contact with or to partially overlap the active region. Each of the P-type diffusion layers is formed to have an expansion to a degree to which the first P-type diffusion layer is in contact with or overlaps a second P-type diffusion layer. Intervals between the P-type implantation layers increase from the active region toward the outer peripheral portion of the semiconductor substrate.

Semiconductor device including an electric field buffer layer and method for manufacturing same

An image recording apparatus in which recording preset information, constituted by a recording start time and a recording end time, is stored for each preset program to be unattended recorded. If there is any overlap between the recording start times and the recording end times of the preset programs that are to be recorded, a warning is generated; and the overlapping preset programs are prioritized for unattended recording.

Image recording apparatus, image recording method and storage medium for recording television programs

A recording apparatus is disclosed which records at least either a video or an audio signal of a broadcast program in accordance with reservation information. The recording apparatus includes: an acquisition block configured to acquire program information about the broadcast program; a calculation block configured to calculate a degree of similarity between a program name included in the reservation information and the program name described in the program information acquired by the acquisition block; a changing block configured to change the reservation information using the program information about the broadcast program determined by the degree of similarity, the changing block further changing the reservation information based on the program information about the broadcast program corresponding to program identification information included in the reservation information; and a recording control block configured to record at least either the video or the audio signal of the broadcast program in accordance with the reservation information.

Recording apparatus, recording method, and program

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Tokyo, Japan

Yuji Murakami