Nichia Corporation

Yuji Matsuyama

Akinori Yoneda

Atsuo Michiue

Shinji Suzuki

Kousuke Ise

Takashi Sakamoto

A light source device includes a light source unit comprising a laser element configured to emit laser light, and a cap hermetically sealing the laser element; a wavelength conversion unit comprising a fluorescent material-containing member containing a fluorescent material adapted to be excited by the laser light; a light-shielding member having a pipe shape and having a first end with a first opening and a second end with a second opening, wherein the light-shielding member defines a hollow optical waveguide between the first end and the second end, the first opening at the first end is covered by the light source unit, and the wavelength conversion unit is arranged at the second end, thereby allowing the laser light propagating through the hollow optical waveguide to reach the fluorescent material-containing member; and an optical member configured to collimate the laser light and direct collimated laser light to the hollow optical waveguide.

Light source device

A nitride semiconductor laser device includes, on a first principle face of the (0001) of a nitride semiconductor substrate, a nitride semiconductor layer having a first conductivity type, an active layer, and a nitride semiconductor layer having a second conductivity type that is different from the first conductivity type, and being formed a stripe ridge on the surface thereof. The (000-1) face and an inclined face other than the (000-1) face are exposed on a second principal face of the nitride semiconductor substrate. The inclined face other than the (000-1) face represents no less than 0.5% over the surface area of the second principal face.

Nitride semiconductor laser device

A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivity type that is different from said first conductivity type, and on the surface of which is formed a stripe ridge; said principal face of said nitride semiconductor substrate having an off angle a (&#x3b8;) with respect to a reference crystal plane, in at least a direction substantially parallel to said stripe ridge.

Growing community of inventors

Tokushima, Japan

Yuji Matsuyama