Sony Corporation

Sony Group Corporation

Hidekazu Ishimura

Masahiko Otsuka

Yuji Masui

Takahiro Arakida

Rintaro Koda

Tomoyuki Oki

Yoshinori Yamauchi

Naoki Jogan

Norihiko Yamaguchi

Osamu Maeda

Kayoko Kikuchi

Masaki Shiozaki

Terukazu Naruse

Satoshi Taniguchi

Nobuhiro Suzuki

Chiyomi Uchiyama

Susumu Sato

Takayuki Kawasumi

Shingo Kaneko

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

Light-emitting element and method for manufacturing the same

A light receiving element () according to an embodiment of the disclosure includes a semiconductor layer () in which a photodiode having a PIN structure is provided in a mesa portion having a pillar shape. The photodiode includes a first conductive layer (), an optical absorption layer (), and a second conductive layer () having a light incident surface. In the light receiving element (), the semiconductor layer () includes, in the vicinity of an interface between the first conductive layer () and the optical absorption layer (), a constricted portion () that is the most constricted of the first conductive layer (). The interface has an end exposed on an internal surface of the constricted portion ().

Light receiving element, optical communication device, and method for manufacturing a light receiving element

The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part.

Semiconductor device and method of manufacturing the same

Light-emitting element

A laser diode with which separation of a current narrowing layer is able to be prevented is provided. The laser diode includes a mesa that has a first multilayer film reflector, an active layer, and a second multilayer film reflector in this order, and has a current narrowing layer for narrowing a current injected into the active layer and a buffer layer adjacent to the current narrowing layer. The current narrowing layer is formed by oxidizing a first oxidized layer containing Al. The buffer layer is formed by oxidizing a second oxidized layer whose material and a thickness are selected so that an oxidation rate is higher than that of the first multilayer film reflector and the second multilayer film reflector and is lower than that of the first oxidized layer. A thickness of the buffer layer is 10 nm or more.

Laser diode

A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.

Semiconductor device and method of manufacturing it

In a VCSEL, a first multilayer film reflector, an active layer having a light emitting central region, a second multilayer film reflector, and a transverse mode adjustment layer are layered in this order. The first multilayer film reflector has a quadrangle current injection region with an intersection of diagonal lines corresponding to the light emitting central region. The second multilayer film reflector has a light emitting window provided in a region corresponding to one diagonal line of the current injection region and a pair of grooves provided with the light emitting window in between. The transverse mode adjustment layer is provided correspondingly to the light emitting window, and reflectance of a peripheral region thereof is lower than that of a central region thereof.

Vertical cavity surface emitting laser

A method for making a light-emitting element assembly including a support substrate having a first surface, a second surface facing the first surface, a recessed portion, and a conductive material layer formed over the first surface and the inner surface of the recessed portion, and a light-emitting element. The light-emitting element has a laminated structure including a first compound semiconductor layer, a light-emitting portion, and a second compound semiconductor layer, at least the second compound semiconductor layer and the light-emitting portion constituting a mesa structure. The light-emitting element further includes an insulating layer formed, a second electrode, and a first electrode. The mesa structure is placed in the recessed portion so that the conductive material layer and the second electrode are in at least partial contact with each other, and light emitted from the light-emitting portion is emitted from the second surface side of the first compound semiconductor layer.

Light-emitting element assembly and method for manufacturing the same

Growing community of inventors

Kanagawa, Japan

Yuji Masui