Kureha Kagaku Kogyo Kabushiki Kaisha

Applied Materials, Inc.

Kureha Chemical Industry Company, Limited

Yuji Maeda

Chikao Yoshikumi

Tadaaki Kato

Takayoshi Fujii

Hideyuki Yamato

Masanori Ikuzawa

Kenichi Saito

R Suryanarayanan Iyer

Yasuhiko Kobayashi

Sanjeev Tandon

Nobuo Tokai

Kenichi Matsunaga

Sean M Seutter

Shigeaki Muto

Tamotsu Kanoh

Randhir P Singh Thakur

Fumisato Yoshino

Kyoya Takahata

Manabu Yamazaki

Thomas Mele

Keiichi Tanaka

Errol Antonio C Sanchez

Koichi Niimura

Steve G Ghanayem

Lee Luo

Fumio Hirose

Andrew C Lam

Yaxin Wang

Aihua Chen

Koji Nakanishi

Jacob W Smith

Sachiko Yamada

Ravi Rajagopalan

Sunderraj Thirupapuliyur

Xiaoliang Jin

Noriyuki Toyoda

Kangzhan Zhang

Toru Hirai

Janardhanan Anand Subramony

Masayuki Hashimoto

Sinji Nakajima

Eiji Inoguchi

Rubi Lapena

Masanori Togawa

Mikio Matsuki

Kenji Fukushima

Katsumi Mitani

Ichiro Kawai

Naomi Yoshida

Chang-Lian Yan

Keiichi Ohtsuka

An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

Silicon nitride film with stress control

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH)&#x2014;N.

Method for silicon based dielectric chemical vapor deposition

Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer including silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer including silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.

Method of fabricating a silicon nitride stack

On a wafer holding areaon the upper surface of a susceptora wafer W is supported by a wafer supportsuch that a gap with a predetermined distance is formed between the wafer W and a wafer heating surfaceA projectionthat decreases the distance of the gap with respect to the wafer W is formed on the wafer heating surfaceAt this time, the heating condition for the wafer W by the susceptoris adjusted by means of the distances of the gaps at the respective portions of the wafer holding area. Thus, the uniformity of the planar temperature distribution of the wafer W and that of the thickness distribution of the formed film can be improved.

Semiconductor-manufacturing apparatus

A silicon comprising film and its method of fabrication is described. The silicon comprising film is grown on a substrate. A hexachlorodisilane (HCD) source gas is one of the reactant species used to form the silicon comprising film. The silicon comprising film is formed under a pressure between 10 Torr and 350 Torr.

Methods for forming silicon comprising films using hexachlorodisilane in a single-wafer deposion chamber

An object of the present invention is to provide a film-forming method, a film-forming system, etc. capable of achieving adequate thickness repeatability and uniformity and sufficiently large film-forming rates in film formation of a thin film on a substrate to be treated and also capable of simplifying a system configuration. A thermal treatment system according to the present invention is a system for forming a thin film of SiO on an Si wafer W and is provided with a reactant gas exhaust system for reducing the pressure around the Si wafer W, a reactant gas supply system for supplying hydrogen gas Gh and oxygen gas Go so as to mix them, onto the Si wafer W, and a chamber having a lamp group G for heating the Si wafer W, and a wafer support member The Si wafer W is set in the chamber the interior of the chamber is depressurized, the Si wafer W is mounted on the wafer support member the reactant gases X as a mixture of hydrogen gas Gh and oxygen gas Go are supplied into a space Sb in the chamber to flow, and the Si wafer W is heated by the lamp group G.

Method and system for forming film, semiconductor device and fabrication method thereof

A multiple step chemical vapor deposition process for depositing a tungsten layer on a substrate. A first step of the deposition process includes a nucleation step in which WF.sub.6 and SiH.sub.4 are introduced into a deposition chamber. Next, the flow of WF.sub.6 and SiH.sub.4 are stopped and diborane is introduced into the chamber for between 5-25 seconds. Finally, during a bulk deposition step, the WF.sub.6 is reintroduced into the chamber along with H.sub.2 and B.sub.2 H.sub.6 flows to deposit a tungsten layer on the substrate. In a preferred embodiment, the bulk deposition step also introduces nitrogen into the process gas.

Chemical vapor deposition process for depositing tungsten

Provided herein is a CVD method and apparatus for the deposition of tungsten in which formation of a film of tungsten material is suppressed at the peripheral edge of the semiconductor substrate. In accordance with the invention, a halogenide purge gas is supplied to the peripheral edge of the processing face of a semiconductor wafer during the chemical vapor deposition of tungsten. The halogenide purge gases interact with the processing gases and form a passivation film at the peripheral edge of the semiconductor wafer which suppresses or prevents the formation of a film of tungsten material on the edge surface. Consequently, CMP can be applied to the tungsten semiconductor wafer, and particles of the tungsten material, etc., are not generated from the intense polishing of the peripheral edge of the wafer. Therefore, an uncontaminated tungsten-coated semiconductor wafer with a precise multilayer electrode wiring structure can be manufactured in large volume and favorable yields.

Suppression of tungsten film deposition on a semiconductor wafer bevel

A multi-functional physiologically active substance can be obtained from the residue of saccharified malt which has been worthless other than feed for cattle. The isolation of the active substance is performed by an extraction of the residue with water or an aqueous solvent and removal of a low molecular weight fraction from the extract.

Physiologically active substance derived or malt and process for the

A multi-functional physiologically active substance can be obtained from the residue of saccharified malt which is worthless other than feed for cattle. The isolation of the active substance is performed by an extraction of the residue with water or an aqueous solvent and removal of a low molecular weight fraction from the extract.

Physiologically active substance derived from malt and process for the

The present invention discloses a novel, labelled vitamin D.sub.3 derivative in which hydrogen atoms on the skeleton portion, i.e. 6- and 19-positions, are substituted with a deuterium atom or a tritium atom, as well as a novel production process of the labelled vitamin D.sub.3 derivative carried out by way of sulfur dioxide addition reaction of a vitamin D.sub.3 derivative. The labelled portion of the novel vitamin D.sub.3 is resistant against in vivo metabolism and make a long period tracing of its pharmacodynamics in a living body possible.

Labelled vitamin D.sub.3 derivative and production process thereof

Disclosed herein is a method for preventing senescence and increasing bone mass namely, bone volume and bone strength which method comprises administering 24,25-dihydroxy cholecalciferol in a pharmaceutically effective amount, and also use of 24,25-dihydroxy cholecalciferol for preparing anti-senescent compositions and compositions for increasing bone mass.

Method for preventing senescence and increasing bone mass

Disclosed herein is a method for inhibiting the formation of urinary calculus by the administration of 24,25-dihydroxycholecarciferol.

Method for inhibiting the formation of urinary calculus utilizing

Disclosed herein is a pharmaceutical composition in dosage unit form, which comprises a dosage effective for treating nephritic disease of a compound of 24,25-dihydroxycholecalciferol as an active ingredient and a pharmaceutically acceptable carrier.

Antinephritic pharmaceutical composition containing 24,

Disclosed herein is a pharmaceutical composition in dosage unit form, which comprises a dosage effective for treating osteoporosis of a compound of 24,25-dihydroxycholecalciferol and a pharmaceutically acceptable carrier.

Antiosteoporotic pharmaceutical composition containing

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Chiba, Japan

Yuji Maeda