Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Toyo Kohan Co., Ltd.

Nakayama Steel Works, Ltd.

Yuji Kusumoto

Hiroshi Kono

Makoto Mizukami

Yujiro Hara

Katsuhisa Tanaka

Osamu Akisue

Shunsuke Asaba

Masaru Furukawa

Shigeyoshi Nishiyama

Masanori Nagata

Fuyuki Yoshida

Satoshi Oi

A semiconductor device includes a first silicon carbide region of a first conductivity type, a second silicon carbide region of a second conductivity type on the first region, and a third silicon carbide region of a second conductivity type on the second region. Fourth and fifth silicon carbide region of the first conductivity type are on the third region. A first electrode has a first portion between the fourth region and fifth region in a first direction. A metal silicide layer is between the first portion and the third region, between the first portion and the fourth region in the first direction, and between the first portion and the fifth silicon carbide region in the first direction.

Semiconductor device and method of manufacturing semiconductor device

Growing community of inventors

Tatsuno Hyogo, Japan

Yuji Kusumoto