Sumitomo Electric Industries, Limited

Canon Kabushiki Kaisha

Kabushiki Kaisha Toshiba

Sony Corporation

Fuji Xerox Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Showa Denko Kabushiki Kaisha

Showa Denko K.k.

National Institute of Advanced Industrial Science and Technology

Yuji Kobayashi

Toshifumi Hosoya

Yasuo Matsuda

Tsuyoshi Nonaka

Tomomi Takata

Hiroshi Suganuma

Kentaro Matsumoto

Tsutomu Takamori

Eisuke Sasaoka

Nobuo Suzuki

Hiroshi Uchida

Kazuhiko Sato

Yoichi Ishiguro

Hidetomo Sohma

Takashi Katagi

Takayuki Shimazu

Hirowo Inoue

Masahiko Takaku

Yuji Suga

Shigeru Semura

Eiichiro Yamada

Shigeru Makino

Jun Fujisawa

Nobuyuki Takeo

Kazunori Iida

Katsuki Ishii

Koji Hashimoto

Masahiro Sato

Makoto Saito

Takashi Sato

Yasuhiro Uehara

Tsuyoshi Shibata

Akira Ishii

Yutaka Wada

Akira Inoue

Kenji Kawaguchi

Hirokazu Tanaka

Toshio Fujita

Tomoyuki Hattori

Eishi Shiobara

Hitoshi Ogatsu

Yasuhiro Kusumoto

Shuji Urasaki

Katsuya Nagayama

Hiroaki Takimoto

Taeko Yamazaki

Shigeki Maekawa

Tomoyuki Takeishi

Yoshitsugu Hirose

Shingo Uchihashi

Tetsuro Nakata

Tsutomu Sugimoto

Tatsuhiko Saito

Shinji Kita

Yoshio Shoji

Tomomi Moriya

Shigeo Fukuoka

Ayako Nakano

Tatsuhiko Saitoh

Takehiro Kondoh

Sumio Soya

Ichiro Yoshimura

Hisako Aoyama

Nobutoshi Sasaki

Mikio Yamashita

Tetsushi Anabuki

Masao Shimizu

Koutarou Sho

Yoshihiro Kon

Yoshio Fujiwara

Masanori Ookoshi

Shinichiro Yamashita

Kazuhiro Oomori

Takamitsu Utsukihara

Shuji Shinoki

Toshiyuki Wakinosono

Shunichiro Kawabata

Maya Miyata

Tooru Ishigaki

Kazuhiro Ohmori

Tomokazu Soda

An image processing apparatus includes a character recognition unit configured to perform character recognition of a character region where characters exist in an image to generate character code, a detection unit configured to detect a region of the image where a feature change in the image is small, and a placement unit configured to place data obtained from the character code in the detected region.

Image processing apparatus, image processing method, and storage medium

According to one embodiment, a mask includes a line-and-space mask pattern. The mask has a separation portion separating a line pattern in a predetermined region within the line-and-space mask pattern. The mask also includes a connection pattern arranged in a crossing direction crossing the extending direction of the line pattern connecting the separated line patterns. The connection pattern is arranged on a position where the end of the line pattern, which is separated by the separation portion, projects from the connection pattern.

Mask having separated line patterns connected by a connecting pattern

A detection apparatus for detecting foreign substances or defective goods, with which it is easy to accomplish inspection even if the inspection objects have a shape that tends to allow rolling, comprises: transparent membersand, partitionsand, a supplying unit, camerasand, a control unit. A removing apparatus, which includes such detection apparatus, comprises a suction controllerand suction nozzlesto. While the partitionsmove around, inspection objects A are each put in each cell of the partitions, and are photographed by the camerasand, from above and below the transparent members, respectively. The images obtained by such photographing are analyzed, and foreign substances or defective goods mingling in the inspection objects A are detected. The foreign substances or defective goods are separated from the conforming goods by selectively sucking the inspection objects A with the suction nozzlesto

Detecting apparatus, removing apparatus, detecting method, and removing method

According to one embodiment, a method for manufacturing a semiconductor device includes forming a film having different filling properties dependent on space width above the patterning film to cover the first line patterns and the second line patterns to form the film on the first line patterns and on the first inter-line pattern space while making a cavity in the first inter-line pattern space and to form the film on at least a bottom portion of the second inter-line pattern space and a side wall of each of the second line patterns. The method includes performing etch-back of the film to remove the film on the first line patterns and on the first inter-line pattern space while causing the film to remain on at least the side wall of the second line patterns.

Method for manufacturing semiconductor device

A document processing apparatus accepts input of image information which represents a document, separates the image information as content of the document into regions, associates the image information separated as content into regions with information used to lay out the content, and holds the associated information as learning information. Subsequently, the document processing apparatus lays out the content of the inputted document based on the held learning information and outputs a document in which the content is laid out.

Apparatus and method for image separation, layout, and templating

A method for forming a pattern according to an embodiment, includes forming a first film pattern having a wide width dimension above a processed film; forming a second film pattern covering a portion of the first film pattern and a third film pattern connected to the second film pattern together above the processed film, the third film pattern having a width dimension narrower than the first film pattern, and to be a line pattern of a line and space pattern; forming a fourth film pattern on a side face of the first film pattern and a plurality of film patterns by the fourth film to be a line pattern of a line and space pattern on both side faces of the third film pattern; and removing the second film pattern and the third film pattern.

Method for forming pattern

A pattern transfer apparatus according to one embodiment includes a transfer region selecting part that performs operation in which when performing pattern transfer from a template provided with N transfer regions (N is an integer of 2 or larger) to a transferring substrate a plurality of times, 1 to N&#x2212;1 transfer regions, which are to be used to perform the transfer to regions of the transferring substrate corresponding to part of the N transfer regions, are selected such that the number of the transfer to be performed using each of the N transfer regions is evened out.

Pattern transfer apparatus and method for fabricating semiconductor device

A novel process for producing a polyfunctional epoxy monomer is provided that facilitates separation of an aqueous layer catalyst from a reaction solution and has satisfactory hydrogen peroxide efficiency by reacting an aqueous hydrogen peroxide solution with a polyolefin without using an organic solvent and under mild conditions. The process in the present invention is a process for producing a corresponding epoxy compound by reacting an organic compound having a carbon-carbon double bond with hydrogen peroxide present in an aqueous hydrogen peroxide solution to epoxidate the double bond, wherein a tungsten compound and tertiary amine are used as reaction catalysts.

Process for production of epoxy compound

Provided is an imaging apparatus capable of obtaining images of an object at high precision even if the intensities of illuminating light temporally varies. The imaging apparatuscomprises a lamp unit, lens, a half mirror, a lens, a liquid crystal tunable filter, a lens, a reference mirror, a reference mirror, an image capturing unit, an operation unit, and a display unit. The reference mirrorsandare provided at the positions to which illuminating light led by an optical system for illuminating light is irradiated and which are located at a part of the view of the image capturing unit. The operation unitcorrects the value of the image part of the objectby using the value of the image part of the reference mirrorsandout of the images captured by the image capturing unit

Imaging apparatus

A semiconductor-device manufacturing method includes steps of performing a sidewall fabrication thereby forming a first pattern structure; measuring an amount of displacement of line portions of the first pattern structure; correcting an overlay specification for an overlay of the first pattern structure and a second pattern structure dynamically based on the amount of displacement; and determining whether an error in the overlay of the first pattern structure and the second pattern structure meets the corrected overlay specification.

Semiconductor-device manufacturing method

A method of substrate edge treatment includes forming a processing target film on a treatment target substrate, applying an energy line to a predetermined position on the processing target film to form a latent image on the processing target film, heating the treatment target substrate in which the latent image is formed on the processing target film, developing the processing target film after the heating, inspecting whether a residue is present at an edge of the treatment target substrate after the developing, and cleaning an end of the treatment target substrate to remove the residue at the edge of the treatment target substrate determined to be defective in the inspecting.

Substrate edge treatment for coater/developer

A foreign matter detector and a foreign matter detecting method are provided, with which foreign matter detection performance can be improved. The foreign matter detector comprises: a means for irradiating first inspection light and second inspection light to an inspection area such that their incident planes are perpendicular to each other; a measuring means for measuring the spectrum of reflected light, the reflected light being a reflection of the inspection light at the inspection area; and a means for determining, by analyzing the spectrum of the reflected light, whether any foreign matter is intermingled or not.

Equipment and method for detecting foreign matters

Novel epoxy compounds having imide structures represented by general formula (I) or general formula (II) below, and having an allyl group in the same molecule, as well as a process for their production (wherein Rand Reach represent hydrogen, a C1-6 alkyl group, or a C1-4 trialkylsilyl group) (wherein Rrepresents hydrogen, a C1-6 alkyl group, or a C1-4 trialkylsilyl group).

Epoxy compounds and method for production of the same

A method for detecting defects which originate from a chemical solution includes coating a chemical solution on a surface of a mask, and radiating an exposure beam to the mask on which the chemical solution is coated, thereby performing enlarged projection exposure on a resist film which is formed on a surface of a substrate for an inspection. Further, the method for detecting defects which originate from a chemical solution includes performing an inspection of defects on the resist film which has been subjected to the enlarged projection exposure, and determining whether a result of the inspection meets a predetermined standard.

Method for detecting defects which originate from chemical solution and method of manufacturing semiconductor device

A search request input processing unit holds an input query word in a query word holding unit. An associative word unfolding processing unit acquires associative words in association with the query word held in the query word holding unit with reference to an associative word dictionary. An image content search processing unit using associative words makes a keyword search of image information on the basis of the obtained associative words and the query word. A sensory pattern unfolding processing unit obtains the query word and sensory patterns corresponding to associative words of the query word, and searches image information using feature amounts of the obtained sensory patterns. A search result integration processing unit integrates the search results obtained by the image content word search processing unit and sensory pattern search processing unit.

Information search apparatus and method, and computer readable memory

Growing community of inventors

Kawasaki, Japan

Yuji Kobayashi