Kawasaki Jukogyo Kabushiki Kaisha

Joled Inc.

Panasonic Corporation

Panasonic Liquid Crystal Display Co., Ltd.

Medicaroid Corporation

Sanyo Electric Co., Ltd.

Yuji Kishida

Takahiro Kawashima

Tsuyoshi Tojo

Arinobu Kanegae

Eiichi Satoh

Toshiaki Yoshitani

Toshihiko Takagi

Genshiro Kawachi

Hisao Nagai

Haruhiko Yoneda

Kazuhiro Yokota

Hiroaki Kitatsuji

Takeaki Wakabayashi

Kenichirou Nishida

Koji Muneto

Mitsutaka Matsumoto

Masami Haino

Takeshi Kurihara

Genshirou Kawashi

Tomohiro Fukuno

Ryosuke Hida

Terumasa Kinugawa

A surgical robot includes an arm configured to allow a medical device to be attached thereto, and an operation unit supported by the arm. The operation unit includes a joystick configured to operate movement of the medical device by the arm.

Surgical robot

In a surgical robot, an operation unit includes an enable switch and an operation tool configured to control a moving direction of an arm, and the enable switch and the operation tool are arranged apart from each other within a range operable by fingers of one hand of an operator in the operation unit.

A surgical robot includes a first indicator configured to indicate a state of a system, and a plurality of second indicators configured to individually indicate states of a plurality of arms, and the state of the system includes a state of the surgical robot excluding the states of the plurality of arms and a state of a doctor-side operation device.

Surgical robot and surgical robot system

A surgical robot includes an arm base mover configured to move an arm base configured to support a plurality of arms, an imaging device provided on the arm base, the imaging device being configured to image a patient placed on a surgical table, and a display configured to display, in real time, the patient imaged by the imaging device.

Surgical robot and method for displaying image of patient placed on surgical table

A surgical robot includes: a plurality of manipulator arms; a platform to which the plurality of manipulator arms are coupled; a positioner configured to change the position and posture of the platform; a controller configured to control the positioner; and a user interface. The user interface includes: first manipulation tools each configured to receive an input of manipulation which selects one of a plurality of operating modes for changing the position and posture of the platform; and a single second manipulation tool configured to receive an input of manipulation information regarding the position and posture. The controller generates a command regarding the position and posture of the platform based on the acquired manipulation information and the selected operating mode and operates the positioner based on the generated command.

Surgical robot and method of manipulating positioner

This battery pack is assembled by welding an opening portion () of a waterproof bag () to provide an insertion opening () that is smaller than the total opening width (W) but allows a battery core pack () to be inserted, inserting the battery core pack () into the waterproof bag (), then, closing the opening portion () of the waterproof bag (), and placing the waterproof bag (), in which the battery core pack () has been placed, into an external case (). In this way, this battery pack can be assembled efficiently, with the battery core pack having been given a waterproof structure by the waterproof bag () while in an ideal state.

Battery pack and production method therefor

A method of manufacturing a thin-film transistor substrate which includes a thin-film transistor includes: forming a planarization layer comprising polyimide material above the thin-film transistor; and heating the thin-film transistor at a temperature of 240&#xb0; C. or lower after the planarization layer is formed.

Method of manufacturing thin-film transistor substrate

A thin-film transistor includes: a gate electrode; a channel layer not adjacent to the gate electrode; a channel protection layer exposing portion of the channel layer; a source electrode contacting the channel layer at portion of an exposed portion of the channel layer; and a drain electrode contacting the channel layer at portion of the exposed portion, in respective order. The channel layer includes oxide semiconductor. Surface of the channel protection layer includes upper surface and side surface extending from the upper surface to the exposed portion. The drain electrode has: a rising portion extending from above the exposed region to the channel layer along the side surface; and an upper surface covering portion continuous with the rising portion and extending onto portion of the upper surface. The upper surface covering portion has a facing portion facing a channel region and being 2.5 &#x3bc;m or less in channel length direction.

Thin-film transistor element, method for manufacturing same, and display device

A thin-film semiconductor device includes a gate electrode formed above a substrate; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed above the gate insulating film and having a channel region; a channel protective layer formed above the semiconductor layer and containing an organic material which includes silicon, oxygen, and carbon; an interfacial layer which is formed in contact with the channel protective layer between the semiconductor layer and the channel protective layer, and which includes carbon as a major component, the carbon originating from the organic material; and a source electrode and a drain electrode which are electrically connected to the semiconductor layer.

Thin-film semiconductor device and method for manufacturing the same

A thin-film transistor includes: a gate electrode above a substrate; a gate insulating layer above the gate electrode; a semiconductor layer opposed to the gate electrode with the gate insulating layer therebetween; a protective layer above the semiconductor layer and comprising an organic material; and a source electrode and a drain electrode each of which has at least a portion located above the protective layer. The protective layer includes an altered layer which has at least a portion contacting the semiconductor layer, and which is generated by alteration of a surface layer of the protective layer in a region exposed from the source electrode and the drain electrode. A relational expression of LogNt&#x2266;0.0556&#x3b8;+16.86 is satisfied where Nt (cm) represents a defect density of the semiconductor layer and &#x3b8; (&#xb0;) represents a taper angle of an edge portion of the protective layer.

Thin-film transistor having tapered organic etch-stopper layer

A method for manufacturing a thin-film transistor includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode which are opposed to each other and each of which has at least a portion located above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; and performing, in a hydrogen atmosphere, plasma treatment on an altered layer which (i) is a surface layer of the protective layer exposed from the source electrode and the drain electrode and altered by the dry etching, and (ii) has at least a portion contacting a surface of the semiconductor layer.

Thin-film transistor and method for manufacturing thin-film transistor

A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the protective layer that is altered by the dry etching; and forming a passivation layer having a major component identical to a major component of the protective layer so as to contact the semiconductor layer in a region in which the altered layer has been removed.

A substrate; a gate electrode formed above the substrate; a gate insulating film formed above the gate electrode; a crystalline silicon semiconductor layer formed above the gate insulating film; an amorphous silicon semiconductor layer formed above the crystalline silicon semiconductor layer; an organic protective film made of an organic material and formed above the amorphous silicon semiconductor layer; and a source electrode and a drain electrode formed above the amorphous silicon semiconductor layer interposing the organic protective film are included, and a charge density of the negative carriers in the amorphous silicon semiconductor layer is at least 3&#xd7;10cm.

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Hyogo, Japan

Yuji Kishida