Murata Manufacturing Co., Ltd.

Yuji Kimura

Hiroki Horiguchi

Kazuhiro Yoshida

Shigeto Taga

Koji Fujimoto

Kazunobu Shimoe

Takenobu Maeda

Toshiyuki Fuyutsume

Yoshitsugu Hori

Hitoshi Kuromi

Toru Kabe

A solid electrolytic capacitor that includes a positive external electrode electrically connected to a core part of a valve-acting metal base included in a capacitor element, a first conductive layer in direct contact with the core part of the valve-acting metal base and covering one end surface of the valve-acting metal base and at least a part of an exterior located around the end surface.

Solid electrolytic capacitor and method for manufacturing same

An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, the first and second sealing frames being composed of a Ni film. A bonding section constituted by a Ni&#x2014;Bi alloy is formed between the first and second sealing frames. For example, a Bi layer is formed on the first sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300&#xb0; C. for at least 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are in close contact with each other, and thus the bonding section, which bonds the first sealing frame to the second sealing frame, is formed.

Method for manufacturing electronic component device with a Ni&#x2014;Bi alloy sealing frame

In a method for producing an electronic component device, a heat bonding step is performed in a state in which low melting point metal layers including low melting point metals including, for example, Sn as the main component, are arranged to sandwich, in the thickness direction, a high melting point metal layer including a high melting point metal including, for example, Cu as the main component, which is the same or substantially the same as high melting point metals defining first and second conductor films to be bonded. In order to generate an intermetallic compound of the high melting point metal and the low melting point metal, the distance in which the high melting point metal is to be diffused in each of the low melting point metal layers is reduced. Thus, the time required for the diffusion is reduced, and the time required for the bonding is reduced.

Electronic component device and method for producing the same

An electronic component device having a first sealing frame formed on a main substrate and a second sealing frame formed on a cover substrate, both of which are composed of a Ni film. A bonding section bonds the first sealing frame to the second sealing frame. For example, a Bi layer is formed on the first sealing frame and an Au layer is formed on the second sealing frame, and then the first sealing frame and the second sealing frame are heated at a temperature of 300&#xb0; C. for 10 seconds while applying pressure in the direction in which the first sealing frame and the second sealing frame are close contact with each other to form the bonding section. The bonding section is constituted by a mixed layer predominantly composed of a mixed alloy of a Ni&#x2014;Bi&#x2014;Au ternary alloy and AuBi.

Electronic component device and method for manufacturing the same

Electronic component device with a Ni-Bi alloy sealing frame

A triaxial acceleration sensor which has a structure including a cover joined to a substrate including a mechanically operable functional unit to be sealed, is adapted in such a way that the joined state can be reliably obtained so as to not interfere with a displacement of the functional unit. A sealing frame is made of a heated polyimide on a periphery of an upper main surface of a substrate provided with a functional unit, and a sealing layer made of a polyimide is formed over an entire lower main surface of a cover. For integrating the substrate and the cover so as to seal the functional unit, the sealing frame and the sealing layer are joined to each other by heating and pressurizing the sealing frame and the sealing layer at a temperature that is about 50&#xb0; C. to about 150&#xb0; C. higher than a glass transition temperature of the polyimide while bringing the sealing frame and the sealing layer into contact with each other. In this case, a recess is formed in the vicinity of a portion of the sealing layer to be brought into contact with the sealing frame so that a bump, generated from the sealing layer which is deformed in the joining step, is prevented from protruding toward the functional unit.

Method for manufacturing electronic component

A circuit element having electrodes on one main surface thereof and a substrate having connection bump electrodes and recognition bump electrodes provided on one main surface thereof are prepared. Connection bumps and recognition bumps are formed on the connection bump electrodes and the recognition bump electrodes by using a wire bonding method. Based on the images of the recognition bumps picked up by an optical device, the location of the recognition bumps is detected and, based on the detected location, the circuit element is connected to the substrate through the connection bumps. Since the upper portions of the recognition bumps are in a convex shape, a contrast with respect to the recognition bump electrodes is easily obtained and the location of the recognition bumps can be correctly detected.

Method for manufacturing an electronic circuit device and electronic circuit device

A surface acoustic wave device includes a surface acoustic wave substrate having two IDT electrodes including wiring electrode portions made of aluminum disposed thereon. First, second and third metal films are laminated on each of the wiring electrode portions. The first metal film has superior bondability to aluminum, and the third metal film has superior bondability to bumps. In addition, the second metal film has an ability to suppress the diffusion of the metal defining the first metal film.

Surface acoustic wave device

A method of manufacturing an electronic component includes bonding an electronic component via a bump to electrically and mechanically connect the electronic component to a base member and bonding a cap member to the base member in such a manner that the cap member covers the electronic component element. High temperature aging is performed after bonding the electronic component to the base member via the bump.

Growing community of inventors

Otsu, Japan

Yuji Kimura