Mitsubishi Electric Corporation

Sony Corporation

Yuji Kawasaki

Manabu Yoshino

Toshihiro Imasaka

Kazuhiro Shimizu

Takeshi Miyazaki

Hiroshi Nagai

Takahiro Tsuge

Masami Sato

Osamu Mizukami

Yasuhiro Okabe

Takuji Ohkubo

Dai Yoneya

Yuuji Sasaki

Kazuhiro Nishida

Osamu Toyoshima

Akihito Yajima

Yutaka Usui

Yoshihiko Okamura

Daisuke Shirato

A semiconductor device includes a semiconductor substrate of a first conductivity type, a RESURF layer of a second conductivity type, a buried layer of the second conductivity type formed in the bottom portion of a high-side circuit, and a MOSFET having the RESURF layer serving as a drift layer, in which the MOSFET includes a first semiconductor layer of the second conductivity type serving as a drain layer, an end portion of the first semiconductor layer is located on a low-side circuit side more than an end portion of the buried layer is, and a curvature center of a curved portion of the first semiconductor layer is located closer to a high-side circuit than a curved portion of the buried layer is, and the curvature of the curved portion of the first semiconductor layer is smaller than that of the curved portion of the buried layer.

Semiconductor device and method of manufacturing semiconductor device

Provided is a semiconductor device including: an N-type diffusion layer being a second region, formed in a surface portion of a P-type diffusion layer being a first region, to function as a RESURF region; an N-type buried diffusion layer being a third region formed in a bottom portion of the second region, close to a high-side circuit; and a MOSFET using the second region as a drift layer. The MOSFET includes a thermal oxide film formed between an N-type diffusion layer being a fourth region serving as a drain region and an N-type diffusion layer being a sixth region serving as a source region, and an N-type diffusion layer being a seventh region formed below the thermal oxide film. The seventh region has an end portion close to a low-side circuit, being closer to the low-side circuit than an end portion of the third region close to the low-side circuit.

Semiconductor device comprising a MOSFET having a RESURF region and higher peak impurity concentration diffusion region in the RESURF region

The semiconductor device that supplies a charging current to a bootstrap capacitor includes a semiconductor layer, an N-type diffusion region, an N-type diffusion region, a P-type diffusion region, a P-type diffusion region, an N-type diffusion region, a source electrode, a drain electrode, a back gate electrode, and a gate electrode. The N-type diffusion region and the N-type diffusion region are electrically connected to a first electrode of the bootstrap capacitor. The N-type diffusion region is supplied with a power supply voltage. The source electrode is connected to the N-type diffusion region and is supplied with the power supply voltage. The back gate electrode is connected to a region separated from the N-type diffusion region and is grounded. The breakdown voltage between the source electrode and the back gate electrode is greater than the power supply voltage.

Semiconductor device

A plurality of semiconductor devices () are formed on a semiconductor wafer (). A film thickness measurement wiring pattern () is formed on a dicing line () defining the plurality of semiconductor devices (). An SOG film () is formed on the semiconductor devices () and the film thickness measurement wiring pattern (). A film thickness of the SOG film () at a central part of the film thickness measurement wiring pattern () is measured. The film thickness measurement wiring pattern () is a rectangular pattern having long sides parallel to the dicing line ().

Method of manufacturing semiconductor apparatus including measuring a film thickness of an SOG film

An object of the present invention is to provide a semiconductor device and a method of manufacturing thereof capable of relaxing a level difference thereon. A semiconductor device according to the present invention includes a first interlayer insulating film having a first opening, and a second interlayer insulating film having a second opening wherein a following expression is satisfied: (HH)/((WW)/2)&#x2264;3.6 where, in sectional view, Wrepresents a width of the first opening, Wrepresents a width of the second opening, Hrepresents a minimum value of a height from a surface of the semiconductor substrate to a surface of the third interlayer insulating film in the second opening, and Hrepresents a height from the surface of the semiconductor substrate to the surface of the third interlayer insulating film in an end of the second opening.

Semiconductor device and method of manufacturing thereof

Method of manufacturing semiconductor apparatus

Camera

In an LCD projector or other projection type display apparatus which uses a lamp such as a xenon lamp for a light source, the lamp is cooled efficiently without increasing ambient noises or without causing the whole apparatus to become large-sized, and at the same time the lifetime and the reliability of a fan which cools the lamp is made improved. When fansandwhich are disposed on a front side of the lamp mounted with a heat sinkrotate, external air of ordinary temperature is taken inlet and guided into ductsandso as to be blown onto the front face of the lamp by means of the fansand. Then, high temperature air which was warmed by being blown onto the lamp is exhausted from an outlet to the outside.

Projection type display apparatus and lamp cooling apparatus

Growing community of inventors

Tokyo, Japan

Yuji Kawasaki