Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Yuji Kawano

Tatsuya Fukami

Kazuhiko Tsutsumi

Motohisa Taguchi

Hiroshi Kobayashi

Yoshio Fujii

Takashi Tokunaga

Yoshinori Tatenuma

Yoshiyuki Nakaki

Shinichi Hosomi

Kazuo Hashima

Masahiro Yokotani

Izuru Shinjo

Naoki Yasuda

Kazuyasu Nishikawa

Hideki Shimauchi

Manabu Tsukamoto

Takaki Sugino

Yoshinobu Maeda

Takafumi Hara

Naoki Hiraoka

Yasuyoshi Hatazawa

Taisuke Furukawa

Shigehisa Suzuki

Yuuichi Sakai

Hirobumi Matsui

Yui Nakaoka

Ikuya Kawakita

Koichi Akiyama

Takeharu Kuroiwa

Yasuyoshi Hori

Koji Tanimoto

Shinji Tanabe

Hiroshi Sakanoue

Hiroshi Shibata

Yukari Toide

Satoi Kobayashi

Yuzou Ohdoi

An object is to reduce the influence of noise due to electric conduction carriers trapped between the surface of a silicon substrate and an oxide and thus achieve strain detection with a high S/N ratio. This semiconductor strain detection element includes: a silicon substrate; and a first impurity diffusion layer having a conduction type different from the silicon substrate, the first impurity diffusion layer being formed inside under a surface of the silicon substrate, wherein an amount of strain in the silicon substrate is detected on the basis of change in a resistance of the first impurity diffusion layer.

Semiconductor strain detection element with impurity diffusion layer

In a thermal infrared detector having trench structures, at least one sensor element is provided between the trench structures, an etching hole through which the sensor element is hollowed out and thereby thermally insulated is provided in a substrate rear surface or on the periphery of a pixel area, and an opening portion is provided below the pixel area.

Thermal infrared detector and manufacturing method for thermal infrared detector

In order to achieve at least one of size reduction and high accuracy by maintaining the reliability of the thermal detection sensor in the thermal detection sensor in the flow state of the fluid to be detected, based on a heat transfer amount from the heating resistor element to the fluid to be detected by heat exchange between the fluid to be detected and the heating resistor element via the flattened film, the thermal type detection sensor for detecting a flow state of the fluid to be detected, and wherein a sidewall covering a sidewall of the heating resistor element and blocking physical contact between the heating resistor element and the flattened film is provided between the heating resistor element and the flattened film, and the sidewall suppresses fluctuation in electric resistance of the heating resistor element due to silicidation of the heating resistor element.

Thermal detection sensor

A pad electrode such that a conductive film is used as the pad electrode in a semiconductor device has an object of preventing Al corrosion and improving Au bonding wire durability. A semiconductor device according to the invention includes a conductive film of Al or having Al as a main component on which a signal processing circuit and a pad electrode portion are formed, a metal film formed on the conductive film, and a protective film formed on the metal film, wherein a metal film region in which atoms derived from the metal film are implanted is formed on a surface of the conductive film exposed by an opening formed in one portion of the protective film and the metal film, and adopted as the pad electrode.

Semiconductor device and manufacturing method thereof

A sensor device module comprises: a substrate having a sensor element covered with a protective film, an integrated circuit formed on the substrate, and a bonding pad part formed on the substrate; wherein the integrated circuit and the sensor element are connected at a contact part, and the sensor element and the contact part have a metal thin film layer which consists of first metal layers and second metal layers, an insulating film which is formed on the metal thin film layer and made from the same material as the protective film, and an exfoliation sacrifice layer which is formed on the insulating film and in contact with the protective film, further wherein an upper most film or a lower most film of the exfoliation sacrifice layer is made from the same material as an upper most film of the metal thin film layer.

Sensor device module

A magnetized scale () in which magnetic pole pairs each formed of a first magnetic portion () and a second magnetic portion () having different magnetic properties are arranged with a period of a magnetic pole pair width 2&#x3bb;, and a magnetosensitive device () in which n magnetosensitive elements (to) are arranged with a magnetosensitive element pitch P so that &#x3bb;=nP may be established are arranged so as to be opposed to each other with a predetermined air gap therebetween. Output values output from the n magnetosensitive elements (to) in parallel are analyzed to calculate a relative position between the magnetosensitive device () and the magnetized scale () as a position detection resolution of &#x3bb;/n.

Magnetic position detection device and magnetic position detection method

A distortion of a signal of a magnetic position detection device is reduced so that precise position information at a high degree of accuracy can be obtained. The magnetic position detection deviceincludes a magnetic movable body, a bridge circuit, a correction circuit, and a detection circuit. The magnetic movable bodyis magnetized so that N-poles and S-poles alternately appear and has a region in which distances between the N-poles and the S-poles are constant. The bridge circuitis formed of first, second, third, and fourth field detection portionsRRR, andR. The correction circuitis formed of fifth and sixth field detection portionsRandR. The detection circuitdetects a position of the magnetic movable bodyon the basis of a differential output Vout of the bridge circuit.

Magnetic position detection device

A differential amplifier generates an offset correction signal based on a rotation detection signal from a rotation detector apparatus and an offset signal. A comparator compares the offset correction signal with a threshold voltage, and outputs a binarized signal representing the comparison result. An average value signal generator circuit generates an average value signal representing the average value of the offset correction signal. The offset signal generator circuit generates the offset signal so that the signal voltage of the average value signal has a voltage value between a threshold voltage and a threshold voltage.

Binarization circuit for binarizing detection signal representing rotation or movement of object

A magnetic position detection apparatus includes a substrate, a magnet, a bridge circuit including first through fourth magneto-electric converting elements formed on the substrate, and a detection circuit. A substrate surface is substantially perpendicular to a magnet magnetization direction. The second and third magneto-electric converting elements are, when viewed along the magnet magnetization direction, disposed to be on or in the vicinity of a straight line passing through a center point of a magnetic pole of the magnet and parallel to a straight line perpendicular to both the magnet magnetization direction and the magnetic mobile object. The first and fourth magneto-electric converting elements are disposed so that, when not opposed to the magnetic mobile object, a component of a substrate of a magnetic field to be applied thereto is substantially same as that of a magnetic field to be applied to the second and third magneto-electric converting elements.

Magnetic position detection apparatus

A magnetic position detecting device includes a magnet; first to fourth magnetoelectric conversion elements formed on a virtual plane; and a flux guide made of a magnetic material. The flux guide includes first and second protrusions provided at a distance from each other in a direction parallel to the virtual plane. A specific portion recessed in a concave shape is provided in the flux guide in a mid-portion between the first and second protrusions. The first and fourth magnetoelectric conversion elements are provided approximately in the mid-portion between the first and second protrusions. The second magnetoelectric conversion element is provided between the first protrusion and the mid-portion.

Magnetic position detecting device

A magnetic detection apparatus includes a first comparison circuit that waveform-shapes the amplitude of a detection signal from magneto-electric transducers by DC coupling, a third comparison circuit that waveform-shapes the detection signal by AC coupling, an oscillation circuit having a natural frequency, a control circuit that counts the output of the first comparison circuit by using the oscillation means, and a selection circuit that selects the output of the first comparison means and the output of the second comparison means. The control circuit counts rising from the next rising or falling from the next falling of an output rectangular wave of the first comparison circuit, and provides output to the selection circuit at the time point at which the count value reaches a desired value. The selection circuit selects and outputs the output rectangular wave of the first comparison circuit or the third comparison circuit.

Magnetic detection apparatus

A magnetic detection device includes a signal processing circuit that detects a moving position and a moving direction of a magnetic mobile object using an output of a comparing circuit configured to output a signal by comparing an output signal of a magneto-electric transducer element with a threshold. A duration during which an output of the signal processing circuit is in a high level or in a low level is fixed to a period tor a period tdepending on the moving direction of the magnetic mobile object. When switching of the moving direction of the magnetic mobile object takes place within the period tor the period t, the signal processing circuit outputs a position signal same as a position signal indicating a position immediately before the switching of the moving direction of the magnetic mobile object due to hysteresis of the threshold of the comparing circuit.

Magnetic detection device

Provided is an apparatus for detecting a moving direction that can accurately detect the position, regardless of the moving direction. The moving direction detector includes groups of sensor elements that face a moving body to output detection signals in accordance with travel of the moving body. The detector includes signal processing units that convert output signals of the groups of sensor elements into rectangular waves and a moving direction detection unit that outputs a signal corresponding to a moving direction of the moving body based on the detection signals from the groups of sensor elements. The moving direction detection unit includes a delay function of generating an output signal at a time instant that is delayed by a predetermined time from a time instant when a moving direction of the moving body is changed.

Moving direction detector

In a magnetic detection apparatus, a magnetic detection sensor generates a sensor output signal whose high level and low level have different potentials in accordance with the moving direction of a magnetic moving object, and a computer unit includes three comparator circuits and detects the output signal of the magnetic detection sensor with three levels of comparison threshold values, so that the moving direction of the magnetic moving object can be detected accurately without any delay.

A magnetic detection device is provided in which a first signal is outputted in accordance with the mutual phase relationship between the output of a first magnetoelectric conversion output circuit and the output of a second magnetoelectric conversion output circuit that are based on the movement, in forward direction, of a detection subject, thereby generating a pulse of a high leveland a low level; a second signal is outputted in accordance with the mutual phase relationship between the output of the first magnetoelectric conversion output circuit and the output of the second magnetoelectric conversion output circuit that are based on the movement, in forward direction, of the detection subject; an output signal processing circuit for generating a pulse of a high leveland a low levelis provided; and not only the pulse of the high leveland the low leveldoes not cross the other comparison level, but also the pulse of the high leveland the low leveldoes not cross the one comparison level.

Growing community of inventors

Chiyoda-ku, Japan

Yuji Kawano