Tdk Corporation

Kyodo Printing Co., Ltd.

Tdx Corporation

Yuji Kakinuma

Keiji Koga

Joichiro Ezaki

Minoru Fujita

Yoichi Fukushima

Masato Takahashi

Shigekazu Sumita

Daisuke Miyauchi

Ryoichi Kondo

Toshio Haga

Hiroya Kitagawa

Teruo Shimada

Koji Shimazawa

Kosuke Tanaka

Yasuhiro Ito

Shinji Hara

Eiji Komura

Naoki Ohta

Katsuyuki Nakada

Susumu Aoki

Takahiro Suwa

Susumu Haratani

Keita Kawamori

Atsushi Tsumita

Yukio Terasaki

Kuniyasu Ito

Hiroshi Karibe

A non-volatile associative memory cell includes: one magnetoresistance effect element including first and second ferromagnetic layers and a non-magnetic layer; first and second match lines connected to the magnetoresistance effect element in accordance with predetermined first and second search line voltages. The magnetoresistance effect element includes: first and second members. The first member includes first and second electrodes disposed at opposite ends. The first ferromagnetic layer is in the first or second member, the non-magnetic layer is stacked in the first direction, and the direction of internal magnetization of the first ferromagnetic layer changes in a case in which a current flows between the first and second electrodes. The non-magnetic and the second ferromagnetic layers are in the second member. A magnetoresistance effect element resistance value changes. An electric potential corresponding to an second ferromagnetic layer electric potential is applied to each of the first and second match lines.

Non-volatile associative memory cell, non-volatile associative memory device, monitoring method, and non-volatile memory cell

A resistive element array circuit includes word lines, bit lines, resistive elements, a selector, a differential amplifier, and a ground terminal. The word lines are coupled to a power supply. The resistive elements are each disposed at an intersection of corresponding one of the word lines and corresponding one of the bit lines. The selector is configured to select one word line and one bit line. The differential amplifier includes a positive input terminal configured to be coupled to the selected one of the bit lines which is selected by the selector, a negative input terminal configured to be coupled to non-selected one of the bit lines which is not selected by the selector and to non-selected one of the word lines which is not selected by the selector, an output terminal being coupled to the negative input terminal. The ground terminal is coupled to the positive input terminal.

Resistive element array circuit, resistive element array circuit unit, and infrared sensor

Provided is a magnetic memory including: a first bit line, a second bit line, and a third bit line; a word line; a first magnetoresistance effect element; a first transistor; a second magnetoresistance effect element; and a second transistor, wherein free layers of the first and second magnetoresistance effect elements and the second bit line are connected, a fixed layer of the first magnetoresistance effect element and a source terminal of the first transistor are connected, a drain terminal of the first transistor and the first bit line are connected, a fixed layer of the second magnetoresistance effect element and a drain terminal of the second transistor are connected, a source terminal of the second transistor and the third bit line are connected, and the word line is connected to each of a gate terminal of the first transistor and a gate terminal of the second transistor.

Magnetic memory

A microwave receiver includes a magnetoresistive element to which a microwave is input, a magnetic field application unit, and a DC bias current application unit. The magnetoresistive element includes a free magnetic layer, a fixed magnetic layer, and a nonmagnetic spacer layer interposed between the free magnetic layer and the fixed magnetic layer. The magnetic field application unit applies a magnetic field to the free magnetic layer. The DC bias current application unit applies a DC bias current to the magnetoresistive element, and includes an input terminal. The DC bias current is made variable by adjusting a DC voltage that is applied to the DC bias current application unit via the input terminal.

Microwave receiver and magnetoresistive device

A frequency converter includes: a plurality of mixers each including a magnetoresistance effect device including a fixed magnetic layer, a free magnetic layer, and a nonmagnetic spacer layer sandwiched between the fixed magnetic layer and the free magnetic layer, when receiving a first high-frequency signal and a local second high-frequency signal, the magnetoresistance effect device multiplying the first high-frequency signal and the local second high-frequency signal by a magnetoresistance effect to generate a multiplication signal, and a magnetic field applying unit that applies a magnetic field to the free magnetic layer. A plurality of multiplication signals generated when the first high-frequency signal and the local second high-frequency signals that differ from one mixer to another are input to the mixers, are added together and are output.

Frequency converter

In order to provide a mixer capable of extracting a high multiplication signal and which has a reception band-pass filter function, a magnetoresistance effect element is provided that includes a pinned magnetization layer, a free magnetization layer, and a non-magnetic spacer layer disposed between the pinned magnetization layer and the free magnetization layer. This allows for a frequency converter which implements a desired band-pass filter by controlling a magnetic field applied by a magnetic-field applying unit to be provided.

Mixer having frequency selectivity

A frequency converter, capable of obtaining resonance characteristics having a high Q factor and a high multiplication signal and having a narrow-band frequency selectivity function, is provided by the following configuration. A magnetoresistance effect element includes a pinned magnetization layer, a free magnetization layer, and a non-magnetic spacer layer disposed between the pinned magnetization layer and the free magnetization layer. In response to an input of a high frequency signal and a local signal, the magnetoresistance effect element generates a voltage signal (multiplication signal) by multiplying the signals by each other using a magnetoresistance effect. A magnetic field generated by a magnetic-field applying unit is applied to the free magnetization layer of the magnetoresistance effect element in a direction perpendicular to a film surface direction or by tilting an angle of the magnetic field from the film surface direction toward a direction perpendicular to the film surface direction.

Mixer

A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms&#x3c;Ha&#x3c;12.57 Ms. More preferably, the free magnetic layer is composed of an alloy or a stacked film containing at least one element selected from Co, Ni, Fe, and B.

Thin-film magnetic oscillation element

A mixer includes an adder that inputs a first high-frequency signal and a second high-frequency signal for local use, adds the first high-frequency signal and the second high-frequency signal, and outputs as an addition signal; a magnetoresistive effect element that includes a fixed magnetic layer, a free magnetic layer, and a non-magnetic spacer layer disposed between the fixed magnetic layer and the free magnetic layer, and is operable when the addition signal has been inputted, to multiply the first high-frequency signal and the second high-frequency signal included in the addition signal using a magnetoresistive effect to generate a multiplication signal; a magnetic field applying unit applying a magnetic field to the free magnetic layer; and a first impedance converting unit that is passive, inputs the multiplication signal outputted from the magnetoresistive effect element, converts the multiplication signal to a lower impedance than an input impedance, and outputs the converted signal.

Mixer and frequency converting apparatus

A heat-assisted magnetic recording head includes a slider, and an edge-emitting laser diode that emits polarized light of TM mode. The laser diode is arranged so that its bottom surface faces the top surface of the slider. An electrode of the laser diode closer to the active layer is bonded to a conductive layer of the slider, whereby the laser diode is fixed to the slider. As viewed from above the laser diode, the bottom surface of the electrode of the laser diode includes a first area that a light propagation path of the laser diode overlies, and a second area other than the first area. The top surface of the conductive layer is in contact not with the first area but with the second area of the bottom surface of the electrode.

Heat-assisted magnetic recording head with laser diode

A mixer includes a magnetoresistive effect element, a magnetic field applying unit, and an impedance circuit. The magnetoresistive effect element includes a fixed magnetic layer, a free magnetic layer, and a nonmagnetic spacer layer disposed between the fixed magnetic layer and the free magnetic layer, is operable when a first high-frequency signal and a second high-frequency signal as a local signal are inputted, to multiply the first high-frequency signal and the second high-frequency signal according to a magnetoresistive effect to generate a multiplication signal. The magnetic field applying unit applies a magnetic field to the free magnetic layer. The impedance circuit has a higher impedance for the multiplication signal than an impedance for the first high-frequency signal and the second high-frequency signal and is disposed between an input transfer line, which transfers the first high-frequency signal and the second high-frequency signal, and the magnetoresistive effect element.

A mixer includes: a magnetoresistive effect element including a fixed magnetic layer, a free magnetic layer, and a nonmagnetic spacer layer disposed between the fixed magnetic layer and the free magnetic layer; and a magnetic field applying unit that applies a magnetic field to the free magnetic layer. The mixer is operable, when a first high-frequency signal and a second high-frequency signal as a local signal are inputted, to multiply the first high-frequency signal and the second high-frequency signal using the magnetoresistive effect element and to generate a multiplication signal. A frequency converting apparatus includes the mixer and a filter operable, when a higher frequency and a lower frequency out of frequencies of the first high-frequency signal and the second high-frequency signal are expressed as fand frespectively, to pass one out of a frequency (f+f) and a frequency (f&#x2212;f) out of the multiplication signal.

A magnetic device includes: a magnetoresistive effect element having a magnetization fixed layer, a magnetization free layer, and a nonmagnetic layer sandwiched between the magnetization fixed layer and the magnetization free layer; an input terminal for feeding an AC signal to the magnetoresistive effect element in its stacking direction; and an output terminal for extracting an output voltage from the magnetoresistive effect element, wherein the nomagnetic layer includes an insulating layer portion comprising an insulating material, and a current-constricting layer portion comprising a conductive material which passes through the insulating layer portion in its film thickness direction.

Magnetic device and frequency detector

A magnetic device and a frequency analyzer are provided as those industrially utilizing a resonance phenomenon of a direction of magnetization of a magnetoresistive element. Since polarities of an alternating current i vary with time, the direction of magnetization oscillates as affected by the magnitude and frequency of the alternating current. When the frequency fof the direction of magnetization of a free layer in the magnetoresistive element coincides with the frequency f of the alternating current flowing in the magnetoresistive element, the oscillation of the direction of magnetization resonates to increase a voltage between output terminals. A magnetic yoke applies such a magnetic field as to cause resonance, to the free layer. A direct current is used as an electric current outputted from a current control circuit and, while this direct current is swept, voltages at respective specific resonance frequencies are detected by a monitor circuit.

Magnetic device and frequency analyzer

There is provided a magnetic memory device capable of reading information even with a lower power supply voltage. The magnetic memory device is equipped with a plurality of storage cells laid out in two dimensions in (i+1) rows and (j+1) columns (where i, j are integers of one or higher). Two magnetoresistive effect revealing bodiesare disposed in each of the storage cells, and each storage cell includes: a first stage circuitthat supplies currents Ib, Ibfor detecting resistances of magnetoresistive effect revealing bodies; an X-direction address decoder circuitthat supplies currents Iw, Iwto the magnetoresistive effect revealing bodies; and a current control circuit (constant current circuit) that carries out control so that the total of the current Iband the current Iwand the total of the current Iwand the current Ibare respectively constant.

Growing community of inventors

Tokyo, Japan

Yuji Kakinuma