Showa Denko K.k.

Seiko Epson Corporation

Yuji Itoh

Nobuo Uotani

Yoshitomo Shimazu

Hiroshi Takahashi

Ayako Nishioka

Takashi Sato

Toshio Koshikawa

Kazuhiro Mitani

Masatoshi Murakami

Fumio Matsui

Kasumi Nakamura

Takayuki Kamemura

Teruyuki Kobayashi

The present invention aims to provide a polishing composition which allows high-speed polishing of a barrier film and an inter-layer dielectric film along with a wiring metal at the same time, while preventing dishing and erosion, and particularly maintaining the flatness of metal film. The chemical-mechanical polishing composition of the present invention comprises a dicarboxylic acid having 7 to 13 carbon atoms, an oxidizing agent, an abrasive and water.

Polishing composition and polishing method

The present invention provides a polishing composition for polishing copper or copper alloy, comprising: an oxidizing agent (A); at least one acids (B) selected from amino acids, carboxylic acids of 8 or less carbon atoms, or inorganic acids; a sulfonic acid (C) having an alkyl group of 8 or more carbon atoms; a fatty acid (D) having an alkyl group of 8 or more carbon atoms; and an N-substituted imidazole (E) represented by the following general formula (1). (In the formula (1), Ra, Rb, and Rc represent H or an alkyl group of 1 to 4 carbon atoms, and Rd represents a group selected from the group consisting of a benzyl group, a vinyl group, an alkyl group of 1 to 4 carbon atoms, and a group in which a portion of H of these groups has been substituted with OH or NH.)

Polishing composition

The present invention provide a chemical-mechanical polishing composition for inhibiting dishing and erosion as well as rapidly polishing an insulating film and barrier film at the same time while maintaining the flatness of the substrate surface polished. The present chemical-mechanical polishing composition comprises methanesulfonic acid, an alkali metal ion, an oxidizing agent, a silica abrasive and water, and has a pH of 8 to 12.

A small-sized semiconductor light-emitting device of high emission directivity and high output is provided. A portion of a light extraction section of a semiconductor light-emitting device including a pn-junction portion is covered with a light-shielding substance of low conductivity. The electrical resistance of the light-shielding substance is 10&#x3a9;m or higher, and the substance contains powder of at least one species selected from metals and pigments. The powder of metal contains at least one species selected from among Al, Cu, Ag, Au, Pt, Ti, Ni, Sn, Pb, Mg, Zn, Fe, Co, and Cr. The powder is a plate-like powder having a thickness falling within a range of 0.001-10 &#x3bc;m and a length falling within a range of 0.01-100 &#x3bc;m.

Semiconductor light-emitting device

An additive for inkjet printing, comprising a stabilized ascorbic acid derivative. Also disclosed are a recording solution, a method for preventing discoloration and fading of an image, and a recording sheet, each using the additive. The color change of an image can be prevented by incorporating the stabilized ascorbic acid derivative into an inkjet-printed image.

Additive for inkjet printing, recording solution, method for preventing discoloration and fading of image, and recording sheet

This invention relates to a polyorganosiloxane comprising a polymethylsilsesquioxane structure as a main structural unit and having a methyl group and a reactive group at the side chains thereof, which is suitable as a polymer modifier; a process for producing the same; a copolymer resin obtained by polymerizing the polyorganosiloxane with a polymerizable monomer or by reacting the polyorganosiloxane with a polymer; a method for crosslinking the copolymer resin; and a coating composition containing the copolymer resin.

Growing community of inventors

Chiba, Japan

Yuji Itoh