Sony Semiconductor Solutions Corporation

Yuji Isogai

Ryota Watanabe

Takuro Murase

Toshifumi Wakano

Yusuke Otake

Takeshi Yamazaki

Yuji Suzuki

Tsutomu Imoto

Takuya Maruyama

Kenji Kurata

The present technology relates to a light receiving device, a method for manufacturing the same, and a distance measuring device capable of improving distance measurement accuracy by maintaining the balance of transfer capability between transfer transistors. A light receiving device includes a pixel including: an embedded photodiode having a charge storage layer of a second conductivity type different from a first conductivity type of a photoelectric conversion region in a region in the vicinity of a second surface on the opposite side to a first surface that is a light incident surface of a substrate; at least two transfer transistors that transfer a charge stored in the photodiode; and at least one discharge transistor that discharges a charge stored in the photodiode; in the light receiving device, the charge storage layer of the second conductivity type is placed to be, in a planar view, surrounded by gates and sidewalls of the transfer transistors, or gates and sidewalls of the transfer transistors and the discharge transistors. The present technology can be applied to, for example, a distance measuring module that measures the distance to a subject, or the like.

Light receiving device, method for manufacturing same, and distance measuring device

The present technology relates to a light-receiving element and a distance-measuring module for enabling improvement of characteristics. A light-receiving element includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer, the semiconductor layer includes a first voltage application portion to which a first voltage is applied, a second voltage application portion to which a second voltage different from the first voltage is applied, a first charge detection portion arranged around the first voltage application portion, and a second charge detection portion arranged around the second voltage application portion, and the wiring layer includes at least one ground line having a wider line width than a power supply line. The present technology can be applied to, for example, a light-receiving element that generates distance information by a ToF method.

Light-receiving element and distance-measuring module

A photodetector comprising: a separation region that is provided in a semiconductor substrate and defines a pixel region; a hole accumulation region that is provided in the semiconductor substrate of the pixel region along a side surface of the separation region; a multiplication region that is provided in the semiconductor substrate of the pixel region and is configured by joining a first conductivity type region and a second conductivity type region from the surface side of the semiconductor substrate in the thickness direction of the semiconductor substrate; and an insulating region provided in the semiconductor substrate in a region between the multiplication region and the hole accumulation region, wherein a formation depth of the insulating region is larger than a formation depth of the first conductivity type region.

Photodetector

The present technology relates to a light-receiving element and a distance measurement module. A light-receiving element includes: a first voltage application unit to which a voltage is applied; a first charge detection unit that is disposed at a periphery of the first voltage application unit; a second voltage application unit to which a voltage is applied; a second charge detection unit that is disposed at a periphery of the second voltage application unit; a third voltage application unit to which a first voltage is applied; and a voltage control unit that applies a second voltage to one of the first voltage application unit and the second a voltage application unit and causes the other to be in a floating state, the second voltage being different from the first voltage. The present technology is applicable to a light-receiving element.

Light-receiving element and distance measurement module using indirect time of flight

The present technology relates to a light reception device and a distance measurement module whose characteristic can be improved. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer arranged between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap having a first voltage application portion and a first charge detection portion arranged around the first voltage application portion, and a second tap having a second voltage application portion and a second charge detection portion arranged around the second voltage application portion. Furthermore, the light reception device is configured such that a phase difference is detected using signals detected by the first tap and the second tap. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

Light reception device and distance measurement module

The present technology relates to a light reception device and a distance measurement module. The light reception device includes an on-chip lens, a wiring layer, and a semiconductor layer between the on-chip lens and the wiring layer. The semiconductor layer includes a first tap to which a first voltage is applied and a first charge detection portion, and a second tap to which a second voltage different from the first voltage is applied and a second charge detection portion. The position of the on-chip lens differs depending upon an in-plane position of a pixel array section, so that an optical path length or a DC contrast of a chief ray from an object is uniform at in-plane pixels of the pixel array section. The present technology can be applied, for example, to a light reception device that generates distance information, for example, by a ToF method, and so forth.

A light-receiving element includes an on-chip lens; an interconnection layer; and a semiconductor layer that is disposed between the on-chip lens and the interconnection layer. The semiconductor layer includes a first voltage application unit to which a first voltage is applied, a second voltage application unit to which a second voltage different from the first voltage is applied, a first charge detection unit that is disposed at the periphery of the first voltage application unit, a second charge detection unit that is disposed at the periphery of the second voltage application unit, and a charge discharge region that is provided on an outer side of an effective pixel region. For example, the present technology is applicable to a light-receiving element that generates distance information in a ToF method, or the like.

Growing community of inventors

Kanagawa, Japan

Yuji Isogai