Rohm Co., Ltd.

Yuji Ishimatsu

Ryuichi Furutani

Hideo Hara

Motohiro Ando

Kenji Hama

Yasumasa Kasuya

Hiroaki Matsubara

Toshio Nakajima

Shigeru Hirata

Hiroshi Kumano

A semiconductor device includes a substrate, a conductive portion, a sealing resin, a plurality of semiconductor chips, and a plurality of temperature detection elements. The substrate has a substrate obverse surface and a substrate reverse surface that face opposite sides in a thickness direction. The conductive portion is formed on the substrate obverse surface. The sealing resin covers at least a part of the substrate. The sealing resin also covers the entire conductive portion. The plurality of semiconductor chips are disposed on the substrate obverse surface. The plurality of temperature detection elements are disposed on the substrate obverse surface. The number of temperature detection elements is equal to or greater than the number of semiconductor chips.

Semiconductor device

A semiconductor device includes a substrate, a conductive section, a sealing resin, and a conductive section wire. The substrate includes a substrate obverse face and a substrate reverse face oriented in opposite directions to each other in a thickness direction. The conductive section is formed of a conductive material and located on the substrate obverse face. The conductive section includes a first section and a second section spaced apart from each other. The sealing resin covers at least a part of the substrate and an entirety of the conductive section. The conductive section wire is conductively bonded to the first section and the second section of the conductive section.

A semiconductor device includes an inverter circuit having a first switching element and a second switching element, a first control circuit, a second control circuit, and a limiting unit. The first switching element is supplied with a power supply voltage. The second switching element includes a first terminal connected to the first switching element, a second terminal connected to ground, and a control terminal. The first control circuit controls the first switching element. The second control circuit controls the second switching element. The limiting unit reduces fluctuation in voltage between the second terminal and the control terminal based on voltage fluctuation at the second terminal of the second switching element.

A semiconductor device Aincludes a substrate, a conductive sectionformed on the substrateand including a conductive material, a leadA located on the substrate, a semiconductor chipA located on the leadA, a control chipG located on the substrateand electrically connected to the conductive sectionand the semiconductor chipA for controlling an operation of the semiconductor chipA, and a resincovering the semiconductor chipA, the control chipG, at least a part of the substrateand a part of the leadA. This configuration contributes to achieving a higher level of integration of the semiconductor device.

An electronic device includes a first electronic component including a first main body, a second electronic component including a second main body, a mounting substrate having a mounting surface, and a heat dissipator having an attaching surface. The mounting surface and the attaching surface face each other in the z direction. The first main body and the second main body are disposed between the mounting substrate and the heat dissipator in the z direction and arranged side by side in the x direction. The first main body has a first front surface facing the attaching surface and a first back surface facing the mounting surface. The second main body has a second front surface facing the attaching surface and a second back surface facing the mounting surface. The dimension of the second main body in the z direction is smaller than the dimension of the first main body in the z direction. The first front surface and the second front surface overlap with each other as viewed in the x direction. A gap is provided between the second back surface and the mounting surface.

Electronic device

The power converter Aincludes a semiconductor device B, and a substrate H on which the semiconductor device Bis mounted, where the semiconductor device Bincludes a control chip constituting a primary control circuit, a semiconductor chip constituting a secondary power circuit, and a transmission circuit for electrically insulating the primary control circuit and the secondary power circuit and for signal transmission between the primary control circuit and the secondary power circuit. The substrate H has a conductive portion K. The power converter Aincludes a connecting terminal Tdisposed on the substrate H and electrically connected to the conductive portion K. The power converter Aincludes a conductive path Dthat is at least partially formed by the conductive portion K of the substrate H, and that electrically connects the primary control circuit and the connecting terminal T. Such a configuration contributes to downsizing the power converter A

Power conversion device

A filter circuit includes a first rise delay circuit that delays a rising time of a first shifted signal by a predetermined time for output and a first fall delay circuit that delays a falling time of a second shifted signal by a predetermined time for output. The first rise delay circuit is configured so that a second rise delay signal does not follow a change in a first voltage toward a decreasing side and follows a change in the first voltage toward an increasing side. The first fall delay circuit is configured so that a second fall delay signal does not follow a change in the first voltage toward a decreasing side and follows a change in the first voltage toward an increasing side.

Signal transmission circuit, switch driving device, and power module

A power semiconductor drive circuit includes a parallel circuit connected to a gate of a power semiconductor element and constituted by two transistors for setting gate resistance of the power semiconductor element; a gate voltage monitoring circuit connected to the gate of the power semiconductor element and the parallel circuit, wherein a monitoring voltage is set in the gate voltage monitoring circuit to monitor a gate voltage of the power semiconductor element; a signal delay circuit to delay an output signal of the gate voltage monitoring circuit; and a gate control circuit to change the magnitude of combined resistance of the parallel circuit based on an output signal output from the signal delay circuit.

Power semiconductor drive circuit, power semiconductor circuit, and power module circuit device

A power module includes a first die pad, a first switching element, a second die pad, a second switching element, an integrated circuit element, an encapsulation resin, and a lead frame assembly. The encapsulation resin encapsulates the first switching element, the second switching element, and the integrated circuit element. The lead frame assembly includes an outer lead and an inner lead. The lead frame assembly includes a first lead frame and a second lead frame. The first lead frame includes a first inner lead connected to the first die pad and a first outer lead connected to the first inner lead. The second lead frame includes a second inner lead connected to the second die pad and a second outer lead connected to the second inner lead.

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Kyoto, Japan

Yuji Ishimatsu